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TE28F160C3BA90 参数 Datasheet PDF下载

TE28F160C3BA90图片预览
型号: TE28F160C3BA90
PDF下载: 下载PDF文件 查看货源
内容描述: 高级+引导块闪存( C3 ) [Advanced+ Boot Block Flash Memory (C3)]
分类和应用: 闪存
文件页数/大小: 68 页 / 1132 K
品牌: INTEL [ INTEL ]
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Intel Advanced+ Boot Block Flash Memory (C3)  
During program or erase modes, RP# transitioning low will abort the in-progress operation. The  
memory contents of the address being programmed or the block being erased are no longer valid as  
the data integrity has been compromised by the abort. During deep power-down, all internal  
circuits are switched to a low-power savings mode (RP# transitioning to V or turning off power  
IL  
to the device clears the status register).  
6.5  
Power and Reset Considerations  
6.5.1  
Power-Up/Down Characteristics  
In order to prevent any condition that may result in a spurious write or erase operation, it is  
recommended to power-up VCC and VCCQ together. Conversely, VCC and VCCQ must power-  
down together.  
It is also recommended to power-up VPP with or after VCC has reached VCC . Conversely, VPP  
min  
must powerdown with or slightly before VCC.  
If VCCQ and/or VPP are not connected to the VCC supply, then VCC should attain VCC before  
min  
applying VCCQ and VPP. Device inputs should not be driven before supply voltage reaches  
VCC  
.
min  
Power supply transitions should only occur when RP# is low.  
6.5.2  
RP# Connected to System Reset  
The use of RP# during system reset is important with automated program/erase devices since the  
system expects to read from the flash memory when it comes out of reset. If a CPU reset occurs  
without a flash memory reset, proper CPU initialization will not occur because the flash memory  
may be providing status information instead of array data. Intel recommends connecting RP# to the  
system CPU RESET# signal to allow proper CPU/flash initialization following system reset.  
System designers must guard against spurious writes when V voltages are above V  
. Because  
CC  
LKO  
both WE# and CE# must be low for a command write, driving either signal to V will inhibit  
IH  
writes to the device. The CUI architecture provides additional protection since alteration of  
memory contents can only occur after successful completion of the two-step command sequences.  
The device is also disabled until RP# is brought to V , regardless of the state of its control inputs.  
IH  
By holding the device in reset during power-up/down, invalid bus conditions during power-up can  
be masked, providing yet another level of memory protection.  
6.5.3  
VCC, VPP and RP# Transitions  
The CUI latches commands as issued by system software and is not altered by V or CE#  
PP  
transitions or WSM actions. Its default state upon power-up, after exit from reset mode or after  
V
transitions above V  
(Lockout voltage), is read-array mode.  
CC  
LKO  
After any program or Block-Erase operation is complete (even after V transitions down to  
PP  
V
), the CUI must be reset to read-array mode via the Read Array command if access to the  
PPLK  
flash-memory array is desired.  
Datasheet  
33  
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