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TE28F160C3BA90 参数 Datasheet PDF下载

TE28F160C3BA90图片预览
型号: TE28F160C3BA90
PDF下载: 下载PDF文件 查看货源
内容描述: 高级+引导块闪存( C3 ) [Advanced+ Boot Block Flash Memory (C3)]
分类和应用: 闪存
文件页数/大小: 68 页 / 1132 K
品牌: INTEL [ INTEL ]
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Intel Advanced+ Boot Block Flash Memory (C3)  
5.6.1  
Program Protection  
In addition to the flexible block locking, the V programming voltage can be held low for absolute  
PP  
hardware write protection of all blocks in the flash device. When V is below or equal to V  
,
PP  
PPLK  
any Program or Erase operation will result in an error, prompting the corresponding status-register  
bit (SR[3]) to be set.  
Figure 7. Example Power Supply Configurations  
System Supply  
System Supply  
VCC  
VPP  
VCC  
12 V Supply  
VPP  
Prot#  
(Logic Signal)  
10  
KΩ  
12 V Fast Programming  
Low-Voltage Programming  
Absolute Write Protection With V  
VPPLK  
Absolute Write Protection via Logic Signal  
PP  
System Supply  
(Note 1)  
System Supply  
VCC  
VCC  
VPP  
VPP  
12 V Supply  
Low Voltage and 12 V Fast Programming  
Low-Voltage Programming  
0645_06  
NOTE:  
1. A resistor can be used if the VCC supply can sink adequate current based on resistor value. See AP-657  
Designing with the Advanced+ Boot Block Flash Memory Architecture for details.  
Datasheet  
31  
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