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Intel Advanced+ Boot Block Flash Memory (C3)
8.0
AC Characteristics
8.1
AC Read Characteristics
Table 13. Read Operations—8 Mbit Density
Density
Product
8 Mbit
90 ns
3.0 V – 3.6 V 2.7 V – 3.6 V
110 ns
3.0 V – 3.6 V 2.7 V – 3.6 V
#
Sym
Parameter
Unit
V
CC
Note
Min
Max
Min
Max
Min
Max
Min
Max
R1
tAVAV Read Cycle Time
3,4
80
90
100
110
ns
ns
ns
ns
ns
ns
ns
ns
ns
R2
R3
R4
R5
R6
R7
R8
R9
tAVQV Address to Output Delay
tELQV CE# to Output Delay
tGLQV OE# to Output Delay
tPHQV RP# to Output Delay
tELQX CE# to Output in Low Z
tGLQX OE# to Output in Low Z
tEHQZ CE# to Output in High Z
tGHQZ OE# to Output in High Z
Output Hold from
3,4
80
80
90
90
100
100
30
110
110
30
1,3,4
1,3,4
3,4
30
30
150
150
150
150
2,3,4
2,3,4
2,3,4
2,3,4
0
0
0
0
0
0
0
0
20
20
20
20
20
20
20
20
Address, CE#, or OE#
Change, Whichever
R10
tOH
2,3,4
0
0
0
0
ns
Occurs First
NOTES:
1. OE# may be delayed up to tELQV– GLQV
2. Sampled, but not 100% tested.
3. See Figure 8, “Read Operation Waveform” on page 42.
t
after the falling edge of CE# without impact on tELQV.
4. See Figure 11, “AC Input/Output Reference Waveform” on page 49 for timing measurements and maximum allowable input
slew rate.
Datasheet
39
INTEL [ INTEL ]
