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EP3C16Q240C8N 参数 Datasheet PDF下载

EP3C16Q240C8N图片预览
型号: EP3C16Q240C8N
PDF下载: 下载PDF文件 查看货源
内容描述: [Field Programmable Gate Array, 15408 CLBs, 472.5MHz, 15408-Cell, CMOS, PQFP240, 34.60 X 34.60 MM, 4.10 MM HEIGHT, 0.50 MM PITCH, PLASTIC, LEAD FREE, QFP-240]
分类和应用: 时钟可编程逻辑
文件页数/大小: 34 页 / 836 K
品牌: INTEL [ INTEL ]
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1–24  
Chapter 1: Cyclone III Device Datasheet  
Switching Characteristics  
Table 1–33. Cyclone III Devices Transmitter Channel-to-Channel Skew (TCCS) – Write Side (1)  
(Part 2 of 2)  
Column I/Os (ps)  
Row I/Os (ps)  
Wraparound Mode (ps)  
Memory  
I/O Standard  
Standard  
Lead  
915  
Lag  
410  
545  
340  
380  
450  
570  
Lead  
Lag  
410  
545  
340  
380  
450  
570  
Lead  
1015  
1125  
980  
Lag  
510  
645  
440  
480  
550  
670  
SSTL-18 Class I  
SSTL-18 Class II  
SSTL-2 Class I  
915  
1025  
880  
DDR2 SDRAM  
DDR SDRAM  
QDRII SRAM  
1025  
880  
SSTL-2 Class II  
1.8 V HSTL Class I  
1.8 V HSTL Class II  
1010  
910  
1010  
910  
1110  
1010  
1110  
1010  
1010  
C8  
SSTL-18 Class I  
SSTL-18 Class II  
SSTL-2 Class I  
1040  
1180  
1010  
1160  
1040  
1190  
440  
600  
360  
410  
490  
630  
I7  
1040  
1180  
1010  
1160  
1040  
1190  
440  
600  
360  
410  
490  
630  
1140  
1280  
1110  
1260  
1140  
1290  
540  
700  
460  
510  
590  
730  
DDR2 SDRAM  
DDR SDRAM  
QDRII SRAM  
SSTL-2 Class II  
1.8 V HSTL Class I  
1.8 V HSTL Class II  
SSTL-18 Class I  
SSTL-18 Class II  
SSTL-2 Class I  
961  
1076  
924  
431  
572  
357  
399  
473  
599  
A7  
961  
1076  
924  
431  
572  
357  
399  
473  
599  
1061  
1176  
1024  
1161  
1056  
1161  
531  
672  
457  
499  
573  
699  
DDR2 SDRAM  
DDR SDRAM  
QDRII SRAM  
SSTL-2 Class II  
1.8 V HSTL Class I  
1.8 V HSTL Class II  
1061  
956  
1061  
956  
1061  
1061  
SSTL-18 Class I  
SSTL-18 Class II  
SSTL-2 Class I  
1092  
1239  
1061  
1218  
1092  
1250  
462  
630  
378  
431  
515  
662  
1092  
1239  
1061  
1218  
1092  
1250  
462  
630  
378  
431  
515  
662  
1192  
1339  
1161  
1318  
1192  
1350  
562  
730  
478  
531  
615  
762  
DDR2 SDRAM  
(2)  
DDR SDRAM  
SSTL-2 Class II  
1.8 V HSTL Class I  
1.8 V HSTL Class II  
QDRII SRAM  
Notes to Table 1–33:  
(1) Column I/O banks refer to top and bottom I/Os. Row I/O banks refer to right and left I/Os. Wraparound mode refers to the combination of column  
and row I/Os.  
(2) For DDR2 SDRAM write timing performance on Columns I/O for C8 and A7 devices, 97.5 degree phase offset is required.  
Table 1–34 lists the memory output clock jitter specifications for Cyclone III devices.  
Table 1–34. Cyclone III Devices Memory Output Clock Jitter Specifications (1), (2) (Part 1 of 2)  
Parameter  
Clock period jitter  
Symbol  
tJIT(per)  
tJIT(cc)  
Min  
-125  
-200  
Max  
125  
200  
Unit  
ps  
Cycle-to-cycle period jitter  
ps  
Cyclone III Device Handbook  
Volume 2  
July 2012 Altera Corporation  
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