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DT28F320J5-120 参数 Datasheet PDF下载

DT28F320J5-120图片预览
型号: DT28F320J5-120
PDF下载: 下载PDF文件 查看货源
内容描述: 5伏英特尔的StrataFlash ?内存 [5 Volt Intel StrataFlash® Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 51 页 / 620 K
品牌: INTEL [ INTEL ]
 浏览型号DT28F320J5-120的Datasheet PDF文件第42页浏览型号DT28F320J5-120的Datasheet PDF文件第43页浏览型号DT28F320J5-120的Datasheet PDF文件第44页浏览型号DT28F320J5-120的Datasheet PDF文件第45页浏览型号DT28F320J5-120的Datasheet PDF文件第47页浏览型号DT28F320J5-120的Datasheet PDF文件第48页浏览型号DT28F320J5-120的Datasheet PDF文件第49页浏览型号DT28F320J5-120的Datasheet PDF文件第50页  
28F320J5 and 28F640J5  
6.6  
AC Characteristics— Write Operations(1,2)  
Valid for All  
Speeds  
Versions  
#
Sym  
(t  
Parameter  
RP# High Recovery to WE# (CE ) GoingLow  
Notes  
Min  
Max  
Unit  
W1  
W2  
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
)
3
4
1
0
µs  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
PHWL PHEL  
X
(t  
)
CE (WE#) Low to WE# (CE ) GoingLow  
ELWL WLEL  
X
X
W3  
Write Pulse Width  
4
70  
50  
50  
10  
0
WP  
W4  
(t  
)
Data Setup to WE# (CE ) GoingHigh  
5
DVWH DVEH  
X
W5  
(t  
)
Address Setup to WE# (CE ) GoingHigh  
5
AVWH AVEH  
X
W6  
(t  
)
CE (WE#) Hold from WE# (CE ) Hig h  
X X  
WHEH EHWH  
W7  
(t  
)
Data Hold from WE# (CE ) Hig h  
X
WHDX EHDX  
W8  
(t  
)
Address Hold from WE# (CE ) Hig h  
0
WHAX EHAX  
X
W9  
Write Pulse Width Hig h  
6
30  
0
WPH  
W10  
W11  
W12  
W13  
W14  
W15  
(t  
)
RP# V Setup to WE# (CE ) GoingHigh  
3
3
PHHWH PHHEH  
HH  
X
(t  
)
)
V
Setup to WE# (CE ) GoingHigh  
0
VPWH VPEH  
PEN  
X
(t  
Write Recovery before Read  
WE# (CE ) Hig h to STS Going Low  
7
35  
WHGL EHGL  
(t  
)
8
90  
WHRL EHRL  
X
RP# V Hold from Valid SRD, STS GoingHigh  
3,8,9  
3,8,9  
0
0
QVPH  
QVVL  
HH  
V
Hold from Valid SRD, STS GoingHigh  
PEN  
NOTE: CE low is defined as the first edge of CE , CE , or CE that enables the device. CE high is defined at  
X
0
1
2
X
the first edg e of CE, CE , or CE that disables the device (see Table 2 on pag e 12).  
0
1
2
1. Read timingcharacteristics duringblock erase, program, and lock-bit configuration operations are the same  
as duringread-only operations. Refer to AC Characteristics–Read-Only Operations.  
2. A write operation can be initiated and terminated with either CE or WE#.  
X
3. Sampled, not 100% tested.  
4. Write pulse width (t ) is defined from CE or WE# going low (whichever goes low last) to CE or WE# going  
WP  
X
WP  
X
high (whichever goes high first). Hence, t  
= t  
= t  
= t  
= t  
. If CE is driven low 10 ns  
WLWH  
ELEH  
WLEH  
ELWH X  
before WE# going low, WE# pulse width requirement decreases to t  
- 10 ns.  
WP  
5. Refer to Table 4 on pag e 17for valid A and D for block erase, program, or lock-bit configuration.  
IN  
IN  
6. Write pulse width hig h (t  
) is defined from CE or WE# going high (whichever goes high first) to CE or  
WPH  
X
X
WE# going low (whichever goes low first). Hence, t  
= t  
= t  
= t  
= t  
.
WPH  
WHWL  
EHEL  
WHEL  
EHWL  
7. For array access, t  
is required in addition to t  
for any accesses after a write.  
AVQV  
WHGL  
8. STS timings are based on STS configured in its RY/BY# default mode.  
9. V should be held at V (and if necessary RP# should be held at V ) until determination of block  
PEN  
PENH  
HH  
erase, program, or lock-bit configuration success (SR.1/3/4/5 = 0).  
46  
Datasheet  
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