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DT28F320J5-120 参数 Datasheet PDF下载

DT28F320J5-120图片预览
型号: DT28F320J5-120
PDF下载: 下载PDF文件 查看货源
内容描述: 5伏英特尔的StrataFlash ?内存 [5 Volt Intel StrataFlash® Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 51 页 / 620 K
品牌: INTEL [ INTEL ]
 浏览型号DT28F320J5-120的Datasheet PDF文件第43页浏览型号DT28F320J5-120的Datasheet PDF文件第44页浏览型号DT28F320J5-120的Datasheet PDF文件第45页浏览型号DT28F320J5-120的Datasheet PDF文件第46页浏览型号DT28F320J5-120的Datasheet PDF文件第47页浏览型号DT28F320J5-120的Datasheet PDF文件第48页浏览型号DT28F320J5-120的Datasheet PDF文件第50页浏览型号DT28F320J5-120的Datasheet PDF文件第51页  
28F320J5 and 28F640J5  
6.7  
Block Erase, Program, and Lock-Bit Configuration  
Performance(1,2)  
#
Sym  
Parameter  
Notes  
Typ(3)  
Max  
Unit  
W16  
W16  
Write Buffer Program Time  
4,5,6,7  
218  
654  
µs  
t
t
WHQV3  
EHQV3  
Byte Program Time (Using Word/Byte Program Command)  
Block Program Time (Using Write to Buffer Command)  
Block Erase Time  
4
4
4
210  
0.8  
1.0  
630  
2.4  
5.0  
µs  
sec  
sec  
t
t
WHQV4  
EHQV4  
W16  
W16  
W16  
W16  
t
t
WHQV5  
EHQV5  
Set Lock-Bit Time  
4
4
64  
.50  
26  
75  
7.0  
35  
µs  
sec  
µs  
t
t
WHQV6  
EHQV6  
Clear Block Lock-Bits Time  
Erase Suspend Latency Time to Read  
t
t
WHRH  
EHRH  
NOTES:  
1. These performance numbers are valid for all speed versions.  
2. Sampled but not 100% tested.  
3. Typical values measured at T = +25 °C and nominal voltages. Assumes corresponding lock-bits are not set.  
A
Subject to change based on device characterization.  
4. Excludes system-level overhead.  
5. These values are valid when the buffer is full, and the start address is aligned on a 32-byte boundary.  
6. Effective per-byte program time (t  
7. Effective per-word program time (t  
, t  
) is 6.8 µs/byte (typical).  
) is 13.6 µs/byte (typical).  
WHQV1 EHQV1  
, t  
WHQV2 EHQV2  
Datasheet  
49  
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