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DT28F320J5-120 参数 Datasheet PDF下载

DT28F320J5-120图片预览
型号: DT28F320J5-120
PDF下载: 下载PDF文件 查看货源
内容描述: 5伏英特尔的StrataFlash ?内存 [5 Volt Intel StrataFlash® Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 51 页 / 620 K
品牌: INTEL [ INTEL ]
 浏览型号DT28F320J5-120的Datasheet PDF文件第38页浏览型号DT28F320J5-120的Datasheet PDF文件第39页浏览型号DT28F320J5-120的Datasheet PDF文件第40页浏览型号DT28F320J5-120的Datasheet PDF文件第41页浏览型号DT28F320J5-120的Datasheet PDF文件第43页浏览型号DT28F320J5-120的Datasheet PDF文件第44页浏览型号DT28F320J5-120的Datasheet PDF文件第45页浏览型号DT28F320J5-120的Datasheet PDF文件第46页  
28F320J5 and 28F640J5  
DC Characteristics, Continued  
Symbol  
Parameter  
Input Low Voltage  
Notes  
Min  
Max  
Unit  
Test Conditions  
V
5
–0.5  
0.8  
V
IL  
V
CC  
V
V
Input High Voltage  
Output Low Voltage  
5
2.0  
V
IH  
OL  
+ 0.5  
0.45  
0.4  
2,5  
V
V
V
V
V
= V  
= V  
= V  
Min, I = 5.8 mA  
OL  
CCQ  
CCQ  
CCQ  
CCQ1  
CCQ2  
CCQ1  
Min, I = 2 mA  
OL  
Min or V  
= V  
Min  
CCQ  
CCQ2  
V
Output High Voltage  
3,7  
2.4  
V
V
I
= –2.5 mA (V  
)
CCQ1  
OH  
OH  
–2 mA (V  
)
CCQ2  
V
I
= V  
Min or V  
Min or V  
= V  
= V  
Min  
Min  
0.85 X  
CCQ  
CCQ1  
CCQ  
CCQ  
CCQ2  
V
= –2.5 mA  
CCQ  
OH  
V
= V  
CCQ1  
V
–0.4  
CCQ  
CCQ2  
CCQ  
V
V
I
= –100 µA  
OH  
V
Lockout duringNormal  
PEN  
V
5,7,8  
3.6  
PENLK  
Operations  
V
duringBlock Erase,  
PEN  
V
V
V
7,8  
9
4.5  
5.5  
V
V
V
PENH  
LKO  
HH  
Program, or Lock-Bit Operations  
V
Lockout Voltage  
3.25  
11.4  
CC  
Set master lock-bit  
Override lock-bit  
RP# Unlock Voltage  
10,11  
12.6  
NOTES:  
1. All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages  
and speeds). Contact Intel’s Application Support Hotline or your local sales office for information about typical  
specifications.  
2. Includes STS.  
3. CMOS inputs are either V  
4. Add 5 mA for V  
0.2 V or GND 0.2 V. TTL inputs are either V or V .  
IL IH  
min.  
CC  
CCQ2  
= V  
CCQ  
5. Sampled, not 100% tested.  
6. I  
the device’s current draw is I  
is specified with the device de-selected. If the device is read or written while in erase suspend mode,  
CCES  
or I  
.
CCR  
CCW  
7. Tie V  
to V (4.5 V–5.5 V).  
PEN  
CC  
8. Block erases, programming, and lock-bit configurations are inhibited when V  
guaranteed in the range between V  
9. Block erases, programming, and lock-bit configurations are inhibited when V < V  
V  
PENH  
, and not  
PENLK  
(max).  
PEN  
(max) and V  
(min), and above V  
PENLK  
PENH  
, and not guaranteed  
CC  
LKO  
in the range between V  
(min) and V (min), and above V (max).  
LKO  
CC CC  
10.Master lock-bit set operations are inhibited when RP# = V . Block lock-bit configuration operations are  
IH  
inhibited when the master lock-bit is set and RP# = V . Block erases and programming are inhibited when  
the correspondingblock-lock bit is set and RP# = V . Block erase, program, and lock-bit configuration  
operations are not guaranteed and should not be attempted with V < RP# < V  
IH  
IH  
.
IH  
HH  
11.RP# connection to a V supply is allowed for a maximum cumulative period of 80 hours.  
HH  
42  
Datasheet  
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