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319537-003US 参数 Datasheet PDF下载

319537-003US图片预览
型号: 319537-003US
PDF下载: 下载PDF文件 查看货源
内容描述: 英特尔系统控制器中心 [Intel System Controller Hub]
分类和应用: 控制器
文件页数/大小: 450 页 / 2593 K
品牌: INTEL [ INTEL ]
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Signal Description  
Power  
Well  
Signal  
Type  
Description  
Bank Select (Bank Address): These signals define  
which banks are selected within each SDRAM row. Bank  
select and memory address signals combine to address  
every possible location within an SDRAM device.  
O
SM_BS[2:0]  
DDR  
DDR  
CMOS1.8  
Row Address Strobe: SM_RAS# is used to signify the  
presence of the row address on SM_MA to the DRAM  
device being selected.  
O
SM_RAS#  
CMOS1.8  
Column Address Strobe: SM_CAS# is used to signify  
the presence of the column address on SM_MA to the  
DRAM device being selected.  
O
SM_CAS#  
SM_WE#  
DDR  
DDR  
CMOS1.8  
O
Write Enable: SM_WE# tells the DRAM memory that it  
is performing a write operation on the bus.  
CMOS1.8  
Receive Enable In: This signal connects to  
SM_SRCVENOUT# internally. This input (driven from  
SM_SRCVENOUT#) enables the DQS input buffers  
during reads.  
I
SM_RCVENIN#  
DDR  
DDR  
CMOS1.8  
Receive Enable Out: This signal connects to  
SM_SRCVENIN# internally. It is part of the feedback  
used to enable the DQS input buffers during reads.  
O
SM_RCVENOUT#  
CMOS1.8  
Differential DDR Clock: SM_CKx and SM_CKx# pairs  
are differential clock outputs. The crossing of the  
positive edge of SM_CKx and the negative edge of  
SM_CKx# is used to sample the address and control  
signals on the DRAM.  
SM_CK[1:0]  
SM_CK[1:0]#  
O
DDR  
DDR  
CMOS1.8  
Chip Select: These signals select particular DRAM  
components during the active state. There is one  
SM_CSx# for each DRAM rank, toggled on the positive  
edge of SM_CKx.  
O
SM_CS[1:0]#  
SM_CKE[1:0]  
CMOS1.8  
Clock Enable: SM_CKEx is used to initialize DRAM  
during power-up and to place all DRAM rows into and  
out of self-refresh during the S3 Suspend-to-RAM low  
power state. SM_CKEx is also used to dynamically  
power down inactive DRAM rows. There is one  
SM_CKEx per SDRAM row, toggled on the positive edge  
of SM_CKx.  
O
DDR  
CMOS1.8  
Input Buffer VREF: This signal is for the input buffer  
differential amplifier to determine a high versus a low  
input voltage.  
I
A
SM_VREF  
DDR  
DDR  
Resistor Compensation Output Pin: This pin is  
connected to a reference resistor to dynamically  
calibrate the driver strengths.  
I/O  
A
SM_RCOMPO  
Datasheet  
33  
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