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319537-003US 参数 Datasheet PDF下载

319537-003US图片预览
型号: 319537-003US
PDF下载: 下载PDF文件 查看货源
内容描述: 英特尔系统控制器中心 [Intel System Controller Hub]
分类和应用: 控制器
文件页数/大小: 450 页 / 2593 K
品牌: INTEL [ INTEL ]
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Signal Description  
Power  
Well  
Signal  
Type  
Description  
Deep Sleep: This signal is asserted by the Intel® SCH to  
the processor. When the signal is low, the processor enters  
the Deep Sleep state by gating off the processor Core clock  
inside the processor. When the signal is high (default), the  
processor is not in the Deep Sleep state. This signal and the  
H_STPCLK# pin shut the clock in the processor and at the  
clock generator, respectively. The H_DPSLP# assertion time  
is wider than the H_STPCLK# assertion time in order for  
the processor to receive an active clock input whenever  
H_DPSLP# is deasserted.  
O
CMOS  
H_DPSLP#  
Core  
Deeper Sleep: When asserted on the platform, this signal  
causes the processor to transition from the Deep Sleep  
State to the Deeper Sleep state. To return to the deep sleep  
state, H_DPRSTP# must be deasserted.  
O
CMOS  
H_DPRSTP#  
Core  
Core  
CPU Power Good: This signal is used for Enhanced Intel  
SpeedStep® Technology support. H_CPUPWRGD goes to  
the processor. It is kept high during the Enhanced Intel  
SpeedStep® Technology state transition to prevent loss of  
processor context.  
O
CMOS  
H_CPUPWRGD  
Host Interface Reference and Compensation  
Differential clock Input for the Host PLL: This low-  
I
H_CLKINP  
H_CLKINN  
voltage differential signal pair is used for FSB transactions.  
The clock input also supplies a signal to the internal core  
and memory interface clocks.  
CMOS  
0.8  
Core  
Host Resistor Compensation: This is connected to a  
reference resistor to dynamically calibrate the driver  
strengths.  
I/O  
A
H_RCOMPO  
H_SWING  
Core  
Core  
Core  
I
A
Voltage Swing Calibration  
Voltage Reference: These pins are for the input buffer  
differential amplifier to determine a high versus a low input  
voltage.  
H_GVREF  
H_CGVREF  
I
A
2.2  
System Memory Signals  
Power  
Well  
Signal  
Type  
Description  
I/O  
CMOS1.8  
Data Lines: The SM_DQ[63:0] signals interface to the  
DRAM data bus.  
SM_DQ[63:0]  
DDR  
Data Strobes: These signals are the data strobes used  
for capturing data. Each strobe signal corresponds to 8  
data bits. During writes, SM_DQSx is centered in data.  
During reads, SM_DQSx is edge aligned with data.  
I/O  
CMOS1.8  
SM_DQS[7:0]  
SM_MA[14:0]  
DDR  
DDR  
O
Memory Address: These signals are used to provide  
the multiplexed row and column address to the SDRAM.  
CMOS1.8  
32  
Datasheet  
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