TC39x BC/BD-Step
Electrical SpecificationFlash Target Parameters
3.32
Flash Target Parameters
Table 3-75 Flash
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Program Flash Erase Time per
logical sector 1)
t
t
ERP CC
-
-
0.5
s
s
cycle count < 1000
Program Flash Erase Time per
Multi-Sector Command 1)
MERP CC
-
-
0.5
For consecutive logical
sectors in a physical
sector with total range ≤
512 kByte; cycle count
< 1000
Program Flash program time
per page in 5 V mode 1)
t
t
t
t
PRP5 CC
PRP3 CC
PRPB5 CC
PRPB3 CC
-
-
-
-
-
-
-
-
-
-
80
µs
µs
µs
µs
s
32 Byte
32 Byte
256 Byte
256 Byte
Program Flash program time
per page in 3.3 V mode 1)
115
220
530
2.2
Program Flash program time
per burst in 5 V mode 1)
Program Flash program time
per burst in 3.3 V mode 1)
Program Flash program time for tPRPB3_1MB
1 MByte with burst programming CC
in 3.3 V mode excluding
communication 1)
Derived value for
documentation purpose
Program Flash program time for tPRPB5_1MB
1 MByte with burst programming CC
in 5 V mode excluding
-
-
-
-
1
s
s
Derived value for
documentation purpose
communication 1)
Program Flash program time for tPRPB5_PF
16
Derived value for
complete PFlash with burst
programming in 5 V mode
excluding communication 1)
CC
documentation purpose
Write Page Once adder 1)
t
ADD CC
-
-
-
-
20
µs
µs
Adder to Program Time
when using Write Page
Once
Program Flash suspend to read tSPNDP CC
120
For Write Burst, Verify
Erased and for multi-
(logical) sector erase
commands
latency 1)
Data Flash Erase Disturb Limit
(single ended sensing mode)
N
N
N
DFD CC
-
-
-
-
-
-
50
cycles
cycles
cycles
Data Flash Erase Disturb Limit
(complement sensing mode)
DFDC CC
UCBD CC
500
500
UCB Erase Disturb Limit
Data Sheet
510
V 1.2, 2021-03
OPEN MARKET VERSION
INFINEON [ Infineon ]
