TC39x BC/BD-Step
Electrical SpecificationFlash Target Parameters
Table 3-75 Flash (cont’d)
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Data Flash Erase Time per
Multi-Sector Command 1)3)5)
t
t
MERD1 CC
-
-
0.5
s
Max 1000
erase/program cycles;
For consecutive logical
sectors ≤ 256KBytes
Data Flash Erase Time per
Multi-Sector Command 1)3)5)
MERDM CC
-
-
1.5
s
Max allowed cycles,
see NE_EEP10x and
NE_HSMxParameters;
For consecutive logical
sectors ≤ 256 kByte
Program Flash Access Delay at tPF_low_VDDP3
reduced VDDP3 voltage supply CC
during cranking
-
-
-
-
-
-
-
-
-
-
60
10
10
10
200
ns
µs
µs
µs
µs
see register
DMU_HF_PWAIT.CFL
ASH
Data Flash Erase Verify time per tVER_PAGE_DC
Time per 8 Byte page
for Verify Erased Page
command
page (Complement Sensing) 2) CC
Data Flash Erase Verify time per tVER_PAGE_DS
Time per 8 Byte page
for Verify Erased Page
command
page (Single Ended Sensing) 1) CC
Program Flash Erase Verify
time per page 1)
tVER_PAGE_P
CC
Time per 32 Byte page
for Verify Erased Page
command
Data Flash Erase Verify time per tVER_SEC_DC
Time per 2 KB sector
for Verify Erased
Logical Sector Range
command
sector (Complement Sensing) 1) CC
Data Flash Erase Verify time per tVER_SEC_DS
-
-
-
-
360
360
µs
µs
Time per 4 KB sector
for Verify Erased
Logical Sector Range
command
sector (Single Ended Sensing) 1) CC
Program Flash Erase Verify
time per sector 1)
tVER_SEC_P
CC
Time per 16KB sector
for Verify Erased
Logical Sector Range
command
Data Flash Erase Verify time per tVER_WL_DC
-
-
-
-
-
-
30
50
30
µs
µs
µs
wordline (ComplementSensing) CC
1)
Data Flash Erase Verify time per tVER_WL_DS
wordline (Single Ended
Sensing) 1)
CC
Program Flash Erase Verify
time per wordline 1)
tVER_WL_P
CC
1) Only vaild for fFSI = 100MHz.
2) Time is not dependent on program mode (5V or 3.3V).
Data Sheet
513
V 1.2, 2021-03
OPEN MARKET VERSION
INFINEON [ Infineon ]
