TC39x BC/BD-Step
Electrical SpecificationFlash Target Parameters
Table 3-75 Flash (cont’d)
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
2000000 cycles
Number of erase operations on NERD1C CC
DF1 over lifetime (complement
sensing mode) 6)
-
-
-
-
-
Number of erase operations on NERD1S CC
DF1 over lifetime (single ended
sensing mode) 7)
-
-
-
500000
500000
125000
cycles
Data Flash Endurance per
EEPROMx sector (complement CC
sensing mode) 8)
NE_EEP10C
cycles Max. data retention
time 10 years
DataFlash Endurance per
EEPROMx sector (single ended CC
sensing mode) 8)
NE_EEP10S
cycles Retention time and Tj
according below
example temperature
profile
-
-
-
-
-
125000
125000
250000
cycles max data retention time
20y, Tj=110°C
cycles max data retention time
8.2y, Tj=125°C
Data Flash Endurance per
HSMx sector (complement
sensing mode) 8)
N
N
E_HSMC CC -
cycles Max. data retention
time 10 years
Data Flash Endurance per
HSMx sector (single ended
sensing mode) 8)
E_HSMS CC -
-
125000
cycles Retention time and Tj
according below
example temperature
profile
-
-
-
-
-
125000
125000
150
cycles max data retention time
20y, Tj=110°C
cycles max data retention time
8.2y, Tj=125°C
Junction temperature limit for
PFlash program/erase
operations
T
JPFlash SR
-
°C
Data Flash Erase Time per
Sector 1)3)5)
t
t
ERD1 CC
ERDM CC
-
-
-
-
0.5
1.5
s
s
Max. 1000
erase/program cycles
Data Flash Erase Time per
Max allowed cycles,
see NE_EEP10 and
NE_HSM parameters
1)3)5)
Sector
DataFlash Adder on Erase Time tER_ADDC32C
-
-
50
ms
Adder per 32 kByte on
erase time; applicable
only when using
per 32kByte erase size when
using complement sensing
mode 1)
CC
complement mode
Data Sheet
512
V 1.2, 2021-03
OPEN MARKET VERSION
INFINEON [ Infineon ]
