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S29GL128P90TFIR10 参数 Datasheet PDF下载

S29GL128P90TFIR10图片预览
型号: S29GL128P90TFIR10
PDF下载: 下载PDF文件 查看货源
内容描述: [High Performance Page Mode]
分类和应用: PC光电二极管内存集成电路闪存
文件页数/大小: 82 页 / 904 K
品牌: INFINEON [ Infineon ]
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S29GL01GP  
S29GL512P  
S29GL256P  
S29GL128P  
Notes  
1. VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.  
2.  
t
for data polling is 45 ns when V = 1.65 to 2.7 V and is 35 ns when V = 2.7 to 3.6 V  
OE IO IO  
3. CE# does not need to go high between status bit reads  
Figure 11.13 Toggle Bit Timings (During Embedded Algorithms)  
tAHT  
tAS  
Addresses  
CE#  
tAHT  
tASO  
tCEPH  
tOEH  
WE#  
OE#  
tOEPH  
tDH  
Valid Data  
tOE  
Valid  
Status  
Valid  
Status  
Valid  
Status  
DQ2 and DQ6  
Valid Data  
(first read)  
(second read)  
(stops toggling)  
RY/BY#  
Note  
A = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read  
cycle CE# does not need to go high between status bit reads  
Figure 11.14 DQ2 vs. DQ6  
Enter  
Embedded  
Erasing  
Erase  
Suspend  
Enter Erase  
Suspend Program  
Erase  
Resume  
Erase  
Erase Suspend  
Read  
Erase  
Suspend  
Program  
Erase  
Complete  
WE#  
Erase  
Erase Suspend  
Read  
DQ6  
DQ2  
Note  
DQ2 toggles only when read at an address within an erase-suspended sector. The system can use OE# or CE# to toggle DQ2 and DQ6.  
Document Number: 002-00886 Rev. *B  
Page 59 of 83  
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