S29GL01GP
S29GL512P
S29GL256P
S29GL128P
11.7.3
S29GL-P Erase and Program Operations
S29GL-P Erase and Program Operations
Parameter
Speed Options
JEDEC
tAVAV
Std.
tWC
tAS
90
100
110
110
0
120 130 Unit
Description
Write Cycle Time (Note 1)
Address Setup Time
Min
Min
Min
Min
90
100
120 130 ns
tAVWL
ns
ns
ns
tASO Address Setup Time to OE# low during toggle bit polling
15
45
tWLAX
tAH
Address Hold Time
Address Hold Time From CE# or OE# high during toggle bit
polling
tAHT
Min
0
ns
tDVWH
tWHDX
tDS
tDH
Data Setup Time
Data Hold Time
Min
Min
Min
Min
Min
Min
Min
Min
Typ
30
0
ns
ns
ns
ns
ns
ns
ns
ns
µs
tCEPH CE# High during toggle bit polling
20
20
0
tOEPH Output Enable High during toggle bit polling
tELWL
tWHEH
tWLWH
tWHDL
tCS
tCH
tWP
CE# Setup Time
CE# Hold Time
Write Pulse Width
0
35
30
480
tWPH Write Pulse Width High
Write Buffer Program Operation (Notes 2, 3)
Effective Write Buffer Program Operation (Notes
2, 4)
Per Word Typ
Per Word Typ
15
µs
µs
tWHWH1 tWHWH1 Accelerated Effective Write Buffer Program
Operation (Notes 2, 4)
13.5
Program Operation (Note 2)
Accelerated Programming Operation (Note 2)
tWHWH2 tWHWH2 Sector Erase Operation (Note 2)
tVHH VHH Rise and Fall Time (Note 1)
tVCS VCC Setup Time (Note 1)
Word
Word
Typ
Typ
Typ
Min
Min
Max
Max
60
54
µs
µs
sec
ns
0.5
250
35
µs
ns
tBUSY Erase/Program Valid to RY/BY# Delay
90
tSEA
Sector Erase Timeout
50
µs
Notes
1. Not 100% tested.
2. See Section 11.6 for more information.
3. For 1–32 words/1–64 bytes programmed.
4. Effective write buffer specification is based upon a 32-word/64-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 110 ns speed option are tested with
VIO = VCC = 2.7 V. AC specifications for 110 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V.
Document Number: 002-00886 Rev. *B
Page 56 of 83
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