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S29GL128P90TFIR10 参数 Datasheet PDF下载

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型号: S29GL128P90TFIR10
PDF下载: 下载PDF文件 查看货源
内容描述: [High Performance Page Mode]
分类和应用: PC光电二极管内存集成电路闪存
文件页数/大小: 82 页 / 904 K
品牌: INFINEON [ Infineon ]
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S29GL01GP  
S29GL512P  
S29GL256P  
S29GL128P  
Power-up Sequence Timings  
Parameter  
Description  
Speed  
Unit  
Reset Low Time from rising edge of VCC (or last Reset pulse) to  
rising edge of RESET#  
tVCS  
Min  
35  
µs  
Reset Low Time from rising edge of VIO (or last Reset pulse) to rising  
edge of RESET#  
tVIOS  
tRH  
Min  
Min  
35  
µs  
ns  
Reset High Time before Read  
200  
Notes  
1. VIO < VCC + 200 mV.  
2. VIO and VCC ramp must be synchronized during power up.  
3. If RESET# is not stable for tVCS or tVIOS  
:
The device does not permit any read and write operations.  
A valid read operation returns FFh.  
A hardware reset is required.  
4. VCC maximum power-up current (RST=VIL) is 20 mA.  
Figure 11.8 Power-up Sequence Timings  
V
CC  
V
V
min  
min  
CC  
V
IO  
IO  
tRH  
CE#  
tVIOS  
tVCS  
RESET#  
Document Number: 002-00886 Rev. *B  
Page 55 of 83  
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