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S29GL128P90TFIR10 参数 Datasheet PDF下载

S29GL128P90TFIR10图片预览
型号: S29GL128P90TFIR10
PDF下载: 下载PDF文件 查看货源
内容描述: [High Performance Page Mode]
分类和应用: PC光电二极管内存集成电路闪存
文件页数/大小: 82 页 / 904 K
品牌: INFINEON [ Infineon ]
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S29GL01GP  
S29GL512P  
S29GL256P  
S29GL128P  
Figure 11.15 Alternate CE# Controlled Write (Erase/Program) Operation Timings  
555 for program  
2AA for erase  
PA for program  
SA for sector erase  
555 for chip erase  
Data# Polling  
Addresses  
PA  
tWC  
tWH  
tAS  
tAH  
WE#  
OE#  
tGHEL  
tWHWH1 or 2  
tCP  
CE#  
Data  
tWS  
tCPH  
tDS  
tBUSY  
tDH  
DQ7#  
DOUT  
tRH  
A0 for program  
55 for erase  
PD for program  
30 for sector erase  
10 for chip erase  
RESET#  
RY/BY#  
Notes  
1. Figure 11.15 indicates last two bus cycles of a program or erase operation.  
2. PA = program address, SA = sector address, PD = program data.  
3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device.  
4. Waveforms are for the word mode.  
Document Number: 002-00886 Rev. *B  
Page 61 of 83  
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