IMW120R020M1H
™
CoolSiC 1200 V SiC Trench MOSFET
3 Body diode (MOSFET)
Note:
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of
the maximum ratings stated in this datasheet.
The chip technology was characterized up to 200 kV/µs. The measured dV/dt was limited by measurement
test setup and package.
Dynamic test circuit see Fig. F.
3
Body diode (MOSFET)
Table 5
Maximum rated values
Parameter
Symbol Note or test condition
Values
1200
94
Unit
Drain-source voltage
VDSS
ISDC
Tvj ≥ 25 °C
VGS = 0 V
V
A
Continuous reverse drain
current for Rth(j-c,max)
limited by Tvj(max)
Tc = 25 °C
,
Tc = 100 °C
58
Peak reverse drain current,
tp limited by Tvj(max)
ISM
VGS = 0 V
213
A
Table 6
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
3.8
Unit
Min.
Max.
Drain-source reverse
voltage
VSD
Qfr
Ifrm
Efr
ISD = 41 A, VGS = 0 V
Tvj = 25 °C
Tvj = 100 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 175 °C
5
V
3.7
3.6
MOSFET forward recovery
charge
VDD = 800 V,
340
nC
A
ISD = 41 A, VGS = 0 V,
diSD/dt = 3000 A/µs, Qfr
includes also QC
622
MOSFET peak forward
recovery current
VDD = 800 V,
Tvj = 25 °C
17
21
ISD = 41 A, VGS = 0 V,
diSD/dt = 3000 A/µs, Qfr
includes also QC
Tvj = 175 °C
MOSFET forward recovery
energy
VDD = 800 V,
Tvj = 25 °C
177
477
µJ
°C
ISD = 41 A, VGS = 0 V,
diSD/dt = 3000 A/µs, Qfr
includes also QC
Tvj = 175 °C
Virtual junction
temperature
Tvj
-55
175
Datasheet
6
Revision 1.30
2023-05-08
INFINEON [ Infineon ]
