IMW120R020M1H
™
CoolSiC 1200 V SiC Trench MOSFET
2 MOSFET
Table 3
Recommended values
Symbol Note or test condition
VGS(on)
Parameter
Values
Unit
Recommended turn-on
gate voltage
15...18
V
Recommended turn-off
gate voltage
VGS(off)
-5...0
V
Table 4
Characteristic values
Parameter
Symbol Note or test condition
Values
Typ.
19
Unit
Min.
Max.
Drain-source on-state
resistance
RDS(on) ID = 41 A
Tvj = 25 °C,
VGS(on) = 18 V
26.9
mΩ
Tvj = 100 °C,
VGS(on) = 18 V
25
36
Tvj = 175 °C,
VGS(on) = 18 V
Tvj = 25 °C,
VGS(on) = 15 V
23.7
30
Gate-source threshold
voltage
VGS(th) ID = 17.6 mA, VDS = VGS
(tested afꢀr 1 ms pulse
at VGS = 20 V)
Tvj = 25 °C
3.5
4.2
3.6
5.2
V
Tvj = 175 °C
Zero gate-voltage drain
current
IDSS
VDS = 1200 V, VGS = 0 V
Tvj = 25 °C
Tvj = 175 °C
VGS = 23 V
VGS = -10 V
320
µA
nA
5.4
Gate leakage current
IGSS
VDS = 0 V
100
-100
Forward transconductance
Internal gate resistance
Input capacitance
gfs
RG,int
Ciss
ID = 41 A, VDS = 20 V
27.4
1.8
S
f = 1 MHz, VAC = 25 mV
Ω
VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV
VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV
VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV
3460
159
23
pF
pF
pF
Output capacitance
Coss
Crss
Reverse transfer
capacitance
Coss stored energy
Total gate charge
Eoss
QG
VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV
65
µJ
nC
VDD = 800 V, ID = 41 A, VGS = 0/18 V, turn-on
pulse
109
Plateau gate charge
QGS(pl) VDD = 800 V, ID = 41 A, VGS = 0/18 V, turn-on
27.1
21.8
nC
nC
pulse
Gate-to-drain charge
QGD
VDD = 800 V, ID = 41 A, VGS = 0/18 V, turn-on
pulse
(table continues...)
Datasheet
4
Revision 1.30
2023-05-08
INFINEON [ Infineon ]
