IMW120R020M1H
™
CoolSiC 1200 V SiC Trench MOSFET
2 MOSFET
Table 4
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
23
Unit
Min.
Max.
Turn-on delay time
td(on)
VDD = 800 V, ID = 41 A,
VGS = 0/18 V,
Tvj = 25 °C
ns
Tvj = 175 °C
21
RGS(on) = 2 Ω,
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = 0 V
Rise time
tr
VDD = 800 V, ID = 41 A,
VGS = 0/18 V,
Tvj = 25 °C
21.9
28.2
ns
ns
ns
µJ
µJ
µJ
°C
Tvj = 175 °C
RGS(on) = 2 Ω,
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = 0 V
Turn-off delay time
td(off)
VDD = 800 V, ID = 41 A,
VGS = 0/18 V,
Tvj = 25 °C
29
32
Tvj = 175 °C
RGS(on) = 2 Ω,
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = 0 V
Fall time
tf
VDD = 800 V, ID = 41 A,
VGS = 0/18 V,
Tvj = 25 °C
16.5
16.4
Tvj = 175 °C
RGS(on) = 2 Ω,
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = 0 V
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Etot
Tvj
VDD = 800 V, ID = 41 A,
VGS = 0/18 V,
Tvj = 25 °C
1050
1273
Tvj = 175 °C
RGS(on) = 2 Ω,
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = 0 V
VDD = 800 V, ID = 41 A,
VGS = 0/18 V,
Tvj = 25 °C
400
444
Tvj = 175 °C
RGS(on) = 2 Ω,
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = 0 V
VDD = 800 V, ID = 41 A,
VGS = 0/18 V,
Tvj = 25 °C
1627
2194
Tvj = 175 °C
RGS(on) = 2 Ω,
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = 0 V
Virtual junction
temperature
-55
175
Datasheet
5
Revision 1.30
2023-05-08
INFINEON [ Infineon ]
