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BTT6200-4ESA 参数 Datasheet PDF下载

BTT6200-4ESA图片预览
型号: BTT6200-4ESA
PDF下载: 下载PDF文件 查看货源
内容描述: [The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10 W 24 V or R5 W 12 V, as well as LEDs in the harsh automotive environment.]
分类和应用:
文件页数/大小: 51 页 / 1248 K
品牌: INFINEON [ Infineon ]
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PROFET + 24V  
BTT6200-4ESA  
Power stage  
VBAT  
VS  
Gate  
driver  
Device  
logic  
VINV  
INV  
Comp.  
IL(INV)  
OUT  
GND  
ZGND  
inverse current.vsd  
Figure 14  
Inverse current circuitry  
5.5  
Electrical characteristics - power stage  
Table 6  
Electrical characteristics: Power stage  
VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified).  
Typical values are given at VS = 28 V, TJ = 25°C  
Parameter  
Symbol  
Values  
Typ.  
Unit Note or Test  
Condition  
Number  
Min.  
ON-state resistance per channel RDS(ON)_150 300  
Max.  
400  
360  
mΩ  
IL = IL4 = 1 A  
VIN = 4.5 V  
P_5.5.1  
TJ = 150°C  
See Figure 9  
ON-state resistance per channel RDS(ON)_25  
200  
1.5  
mΩ  
A
10)TJ = 25 °C  
10) TA = 85°C  
TJ < 150°C  
P_5.5.21  
P_5.5.2  
Nominal load current One  
channel active  
IL(NOM)1  
Nominal load current All  
channels active  
IL(NOM)2  
1
A
P_5.5.3  
P_5.5.4  
Output voltage drop limitation at VDS(NL)  
10  
22  
mV  
IL = IL0 = 25 mA  
small load currents  
See Chapter 9.3  
Drain to source clamping voltage VDS(AZ)  
65  
70  
75  
V
IDS = 5 mA  
See Figure 12  
See Chapter 9.1  
11)  
P_5.5.5  
P_5.5.6  
VDS(AZ) = [VS - VOUT  
]
Output leakage current per  
IL(OFF)  
0.1  
0.5  
µA  
V floating  
IN  
channel TJ ≤ 85 °C  
VOUT = 0 V  
TJ ≤ 85°C  
10  
Not subject to production test, specified by design.  
Test at TJ = -40°C only  
11  
Datasheet  
18  
Rev. 1.00  
2019-03-09  
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