™
PROFET + 24V
BTT6200-4ESA
Protection functions
ISOV
ZIS(AZ)
VS
ZD(AZ)
VBAT
ZDS(AZ)
IS
RSENSE
DSEL0
DSEL1
DEN
RDSEL
RDSEL
RDEN
LOGIC
INx
RIN
OUTx
ZDESD
GND
RIS
ZGND
Overvoltage protection.vsd
Figure 17
Overvoltage protection with external components
6.4
Reverse polarity protection
In case of reverse polarity, the intrinsic body diodes of the power DMOS causes power dissipation. The current
in this intrinsic body diode is limited by the load itself. Additionally, the current into the ground path and the
logic pins has to be limited to the maximum current described in Chapter 4.1 with an external resistor. Figure
18 shows a typical application. RGND resistor is used to limit the current in the Zener protection of the device.
Resistors RDSEL, RDEN, and RIN are used to limit the current in the logic of the device and in the ESD protection
stage. RSENSE is used to limit the current in the sense transistor which behaves as a diode. The recommended
value for RDEN = RDSEL = RIN = RSENSE = 10 kΩ. It is recommended to use a resistor in series to a diode in the
ground path.
During reverse polarity, no protection functions are available.
Datasheet
22
Rev. 1.00
2019-03-09
INFINEON [ Infineon ]
