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BTT6200-4ESA 参数 Datasheet PDF下载

BTT6200-4ESA图片预览
型号: BTT6200-4ESA
PDF下载: 下载PDF文件 查看货源
内容描述: [The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10 W 24 V or R5 W 12 V, as well as LEDs in the harsh automotive environment.]
分类和应用:
文件页数/大小: 51 页 / 1248 K
品牌: INFINEON [ Infineon ]
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PROFET + 24V  
BTT6200-4ESA  
Protection functions  
VOUT  
undervoltage behavior.vsd  
VS  
VS(UV)  
VS(OP)  
Figure 16  
Undervoltage behavior  
6.3  
Overvoltage protection  
There is an integrated clamp mechanism for overvoltage protection (ZD(AZ)). To guarantee this mechanism  
operates properly in the application, the current in the Zener diode has to be limited by a ground resistor.  
Figure 17 shows a typical application to withstand overvoltage issues. In case of supply voltage higher than  
VS(AZ), the power transistor switches ON and in addition the voltage across the logic section is clamped. As a  
result, the internal ground potential rises to VS - VS(AZ). Due to the ESD Zener diodes, the potential at pin INx,  
DSELx, and DEN rises almost to that potential, depending on the impedance of the connected circuitry. In the  
case the device was ON, prior to overvoltage, the BTT6200-4ESA remains ON. In the case the BTT6200-4ESA was  
OFF, prior to overvoltage, the power transistor can be activated. In the case the supply voltage is in above  
VBAT(SC) and below VDS(AZ), the output transistor is still operational and follows the input. If at least one channel  
is in the ON state, parameters are no longer guaranteed and lifetime is reduced compared to the nominal supply  
voltage range. This especially impacts the short circuit robustness, as well as the maximum energy EAS  
capability. ZGND is recommended to be a resistor in series to a diode.  
Datasheet  
21  
Rev. 1.00  
2019-03-09  
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