®
PROFET BTS 740 S2
Maximum Ratings at Tj = 25°C unless otherwise specified
Parameter
Symbol
Values
Unit
Supply voltage (overvoltage protection see page 5)
Vbb
Vbb
43
34
V
Supply voltage for full short circuit protection
Tj,start =-40 ...+150°C
V
Load current (Short-circuit current, see page 5)
IL
self-limited
60
A
V
3)
Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V VLoaddump
RI2) = 2 Ω, td = 200 ms; IN= low or high,
each channel loaded with RL = 7.0 Ω,
Operating temperature range
Storage temperature range
Power dissipation (DC)4)
(all channels active)
Tj
-40 ...+150
-55 ...+150
°C
W
Tstg
Ta = 25°C: Ptot
Ta = 85°C:
3.8
2.0
Maximal switchable inductance, single pulse
Vbb =12V, Tj,start =150°C4),
18
16
mH
kV
I = 5.5 A, EAS = 370 mJ, 0Ω
one channel: ZL
IL = 8.5 A, EAS = 790 mJ, 0Ω
two parallel channels:
L
see diagrams on page 10
Electrostatic discharge capability (ESD)
(Human Body Model)
IN: VESD
ST, IS:
out to all other pins shorted:
1.0
4.0
8.0
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5kΩ; C=100pF
Input voltage (DC)
VIN
-10 ... +16
V
Current through input pin (DC)
Current through status pin (DC)
Current through current sense pin (DC)
see internal circuit diagram page 9
IIN
IST
IIS
±2.0
±5.0
±14
mA
Thermal Characteristics
Parameter and Conditions
Symbol
Values
typ
Unit
min
--
Max
12
Thermal resistance
junction - soldering point4),5)
junction - ambient4)
each channel: Rthjs
K/W
--
40
33
Rthja
one channel active:
all channels active:
--
--
--
--
1)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended.
2)
3)
4)
R = internal resistance of the load dump test pulse generator
I
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air. See page 15
5)
Soldering point: upper side of solder edge of device pin 15. See page 15
Semiconductor Group
3
2003-Oct-01
INFINEON [ Infineon ]
