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BTS740S2 参数 Datasheet PDF下载

BTS740S2图片预览
型号: BTS740S2
PDF下载: 下载PDF文件 查看货源
内容描述: 智能高侧电源开关两个渠道: 2× 30mз电流检测 [Smart High-Side Power Switch Two Channels: 2 x 30mз Current Sense]
分类和应用: 开关电源开关
文件页数/大小: 15 页 / 423 K
品牌: INFINEON [ Infineon ]
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®
PROFET BTS 740 S2  
Truth Table  
Current  
Sense 1  
Current  
Sense 2  
Input 1 Output 1  
Input 2 Output 2  
Status 1  
Status 2  
level  
level  
level  
I
IS  
Normal  
L
H
L
H
L
L
H
L
H
L
H
L
H
H
H
H
0
operation  
Current-  
limitation  
Short circuit to  
GND  
nominal  
0
0
0
0
21  
H
)
L
Over-  
temperature  
Short circuit to  
L
H
L
L
L
H
H
H
H
0
0
0
22)  
L
23)  
V
bb  
H
L
<nominal  
24  
25)  
Open load  
L
H
0
0
)
L
H (L  
L
)
H
L
L
L
L
L
Undervoltage  
Overvoltage  
L
H
L
H
L
H
L
H
L
0
0
0
0
0
Negative output  
voltage clamp  
L = "Low" Level  
H = "High" Level  
H
X = don't care  
Z = high impedance, potential depends on external circuit  
Status signal after the time delay shown in the diagrams (see fig 5. page 13)  
Parallel switching of channel 1 and 2 is possible by connecting the inputs and outputs in parallel. The status  
outputs ST1 and ST2 have to be configured as a 'Wired OR' function with a single pull-up resistor. The current  
sense outputs IS1 and IS2 have to be connected with a single pull-down resistor.  
Terms  
I
bb  
V
Leadframe  
Leadframe  
V
V
bb  
ON1  
ON2  
I
I
IN1  
IN2  
I
V
V
3
4
bb  
7
8
I
bb  
I
L1  
IN1  
L2  
IN2  
17,18  
13,14  
OUT1  
OUT2  
I
ST1  
I
ST2  
PROFET  
Chip 1  
PROFET  
Chip 2  
ST1  
ST2  
I
IS1  
IS2  
V
V
V
V
ST2  
IN2  
ST1  
IN1  
IS1  
R
IS2  
GND1  
2
GND2  
6
5
9
V
V
V
OUT2  
V
OUT1  
IS1  
IS2  
I
I
GND1  
GND2  
R
GND1  
GND2  
Leadframe (V ) is connected to pin 1,10,11,12,15,16,19,20  
bb  
External R  
optional; two resistors R , R  
GND1  
=150 or a single resistor R  
=75 for reverse  
GND  
GND2  
GND  
battery protection up to the max. operating voltage.  
21)  
22)  
The voltage drop over the power transistor is Vbb-VOUT > 3V typ. Under this condition the sense current IIS is  
zero  
An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND  
is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.  
23)  
24)  
25)  
Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS.  
Power Transistor off, high impedance  
with external resistor between VBB and OUT  
Semiconductor Group  
8
2003-Oct-01  
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