Target Data Sheet BTS555
Parameter and Conditions
Symbol
Values
Unit
at Tj = -40 ... +150°C, V = 12V unless otherwise specified
bb
min
typ
max
Thermal overload trip temperature
Tjt
150
--
--
°C
K
Thermal hysteresis
∆Tjt
--
10
--
Reverse Battery
16)
Reverse battery voltage
On-state resistance (Pins 1,5 to pin 3)
-Vbb
--
--
--
16
V
T =25°C:
j
RON(rev)
2.8
0
tbd
0
mΩ
Vbb=-12V, VIN=0, IL=-tbd (>=20)A, RIS=1kΩT =
j
150°C:
Integrated resistor in V line
Rbb
--
120
--
bb
Ω
Diagnostic Characteristics
Current sense ratio, static on-condition,
kILIS =IL :IIS, VON <1.5V17),
VIS <VOUT - 5 ???V, VbIN >4.5V
-40°C:
25°C:
150°C:
kILIS
-- 26 530
-- 25 430
-- 23 520
--
--
--
-40°C: +25°C: 150°C:
±4.5% ±4.2% ±4.0%
±8.9% ±7.5% ±6.1%
±15% ±12% ±9.0%
±46% ±36% ±24%
IL =180A:
IL =50A:
IL =25A:
IL =10A:
see diagram on page 12
IIN = 0 (e.g. during deenergizing of inductive loads):
--
6.5
0
--
-- mA
Sense current saturation
Current sense leakage current
IIS,lim
--
IIN =0, VIS =0: IIS(LL)
IIS(LH)
--
--
--
2
0.5
µA
--
VIN =0, VIS =0, IL ≤0:
Current sense settling time18) after positive input
slope (90% of IIS static) IL =0/tbd (>=20)A: tson(IS)
Current sense settling time18) after negative input
--
--
--
tbd
tbd
tbd
500
500
500
µs
µs
slope (10% of IIS static)
IL =tbd (>=20)/0A: tsoff(IS)
Current sense settling time18) after change of load
current (60% to 90%)
IL =15/tbd (>=20)A: tslc(IS)
Tj =-40°C: VbIS(Z)
Tj =25...+150°C:
µs
Overvoltage protection
Ibb =15mA
60
62
--
66
--
--
V
16)
The reverse load current through the intrinsic drain-source diode has to be limited by the connected load
(as it is done with all polarity symmetric loads). Note that under off-conditions (I =I =0) the power
IN IS
transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the
intrinsic drain-source diode. The temperature protection is not active during reverse current operation!
Increasing reverse battery voltage capability is simply possible as described on page9.
17)
18)
If VON is higher, the sense current is no longer proportional to the load current due to sense current
saturation, see IIS,lim
.
Not tested, specified by design.
Semiconductor Group
Page 5
1998-Jan-14
INFINEON [ Infineon ]
