Target Data Sheet BTS555
Current sense status output
Terms
I
bb
V
bb
R
3
bb
V
V
bIN
Z,IS
V
V
ON
bb
ZD
I
L
IS
IN
OUT
V
2
bb
1,5
I
IS
PROFET
V
IS
R
R
IN
IS
IS
4
I
V
V
IS
S
IN
bIS
VZ,IS = 66V (typ.), R =1kΩ nominal (or 1kΩ /n, if n
I
IS
D
IN
V
OUT
devices are connected in parallel). IS = IL/kilis can be
only driven by the internal circuit as long as Vout - VIS
5 ??? V. If you want to measure load currents up to
Vbb - 5 ??? V
>
R
V
IS
IS
IL(M), RIS should be less than
.
Two or more devices can easily be connected in
parallel to increase load current capability.
IL(M) / Kilis
Note: For large values of R the voltage VIS can
IS
reach almost V . See also overvoltage protection.
bb
If you don’t use the current sense output in your
application, you can leave it open.
RON measurement layout
≤ 5.5 mm
Short circuit detection
Fault Condition: VON > VON(SC) (6V typ.) and t> td(SC)
(80 ...300 µs).
+ V
bb
Sense
contacts
V
force contacts
Out Force
contacts
bb
(both out
pins parallel)
V
ON
OUT
Input circuit (ESD protection)
Short circuit
detection
Logic
unit
V
bb
R
Inductive and overvoltage output clamp
bb
ZD
V
Z,IN
+ V
bb
V
bIN
V
IN
Z1
IIN
V
ON
V
OUT
ZG
V
PROFET
IN
IS
V
OUT
D
When the device is switched off (I =0) the voltage
IN
S
between IN and GND reaches almost V . Use a
bb
mechanical switch, a bipolar or MOS transistor with
appropriate breakdown voltage as driver.
VZ,IN = 66V (typ).
VON is clamped to VON(Cl) =42V typ. At inductive load
switch-off without DS, VOUT is clamped to VOUT(CL)
-15V typ. via VZG. With DS, VOUT is clamped to Vbb
=
-
VON(CL) via VZ1. Using DS gives faster deenergizing of
Semiconductor Group
Page 7
1998-Jan-14
INFINEON [ Infineon ]
