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2ED2110S06M 参数 Datasheet PDF下载

2ED2110S06M图片预览
型号: 2ED2110S06M
PDF下载: 下载PDF文件 查看货源
内容描述: [650 V high speed, high current high-side and low-side gate driver with typical 2.5 A source and sink currents in DSO-16 package for driving power MOSFETs and IGBTs.]
分类和应用: 双极性晶体管
文件页数/大小: 31 页 / 1407 K
品牌: INFINEON [ Infineon ]
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2ED2110S06M  
650 V high-side and low-side driver with integrated bootstrap diode  
of the input pin is left floating, the output of the corresponding stage is held in the low state. This is achieved  
using pull-down resistors on all the input pins (HIN, LIN) as shown in the block diagram.  
VIH  
VIL  
High  
Low  
Low  
Figure 10  
HIN & LIN input thresholds  
5.6  
Undervoltage lockout  
This IC provides undervoltage lockout protection on both the VCC (logic and low-side circuitry) power supply and  
the VBS (high-side circuitry) power supply. Figure 11 is used to illustrate this concept; VCC (or VBS) is plotted over  
time and as the waveform crosses the UVLO threshold (VCCUV+/- or VBSUV+/-) the undervoltage protection is enabled  
or disabled.  
Upon power-up, should the VCC voltage fail to reach the VCCUV+ threshold, the IC won’t turn-on. Additionally, if the  
VCC voltage decreases below the VCCUV- threshold during operation, the undervoltage lockout circuitry will  
recognize a fault condition and shutdown the high and low-side gate drive outputs.  
Upon power-up, should the VBS voltage fail to reach the VBSUV+ threshold, the IC won’t turn-on. Additionally, if the  
VBS voltage decreases below the VBSUV- threshold during operation, the undervoltage lockout circuitry will  
recognize a fault condition, and shutdown the high-side gate drive outputs of the IC.  
The UVLO protection ensures that the IC drives the external power devices only when the gate supply voltage is  
sufficient to fully enhance the power devices. Without this feature, the gates of the external power switch could  
be driven with a low voltage, resulting in the power switch conducting current while the channel impedance is  
high; this could result in very high conduction losses within the power device and could lead to power device  
failure.  
VCC  
(or VBS  
)
VCCUV+  
(or VBSUV+  
)
VCCUV-  
(or VBSUV-  
)
Time  
UVLO Protection  
(Gate Drive Outputs Disabled)  
Normal  
Normal  
Operation  
Operation  
Figure 11  
UVLO protection  
5.7  
Bootstrap diode  
An ultra-fast bootstrap diode is monolithically integrated for establishing the high side supply. The differential  
resistor of the diode helps to avoid extremely high inrush currents when initially charging the bootstrap  
Datasheet  
www.infineon.com/soi  
11 of 31  
V 2.5  
2023-01-31  
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