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IDT7132SA100PB 参数 Datasheet PDF下载

IDT7132SA100PB图片预览
型号: IDT7132SA100PB
PDF下载: 下载PDF文件 查看货源
内容描述: HIGH -SPEED 2K ×8双端口静态RAM [HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM]
分类和应用:
文件页数/大小: 11 页 / 176 K
品牌: IDT [ INTEGRATED DEVICE TECHNOLOGY ]
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IDT7132SA/LA AND IDT7142SA/LA  
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM  
MILITARY AND COMMERCIAL TEMPERATURE RANGES  
(3)  
TIMING WAVEFORM OF READ CYCLE NO. 2, EITHER SIDE  
tACE  
CE  
OE  
AOE(4)  
t
HZ(2)  
t
(2)  
HZ  
(1)  
t
t
LZ  
VALID DATA  
DATAOUT  
t
LZ(1)  
(4)  
PD  
t
t
PU  
ICC  
CURRENT  
50%  
50%  
I
SS  
2692 drw 08  
NOTES:  
1. Timing depends on which signal is asserted last, OE or CE.  
2. Timing depends on which signal is deaserted first, OE or CE.  
3. R/W = VIH, and the address is valid prior to or coincidental with CE transition Low.  
4. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA, and tBDD.  
AC ELECTRICAL CHARACTERISTICS OVER THE  
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(5)  
(2)  
(6)  
7132X20  
7132X25  
7132X35  
7132X55  
7142X55  
7132X100  
7142X100  
(6)  
7142X25  
7142X35  
Symbol  
Parameter  
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit  
Write Cycle  
tWC  
tEW  
tAW  
tAS  
Write Cycle Time(3)  
20  
15  
15  
0
15  
0
10  
0
0
10  
10  
25  
20  
20  
0
15  
0
12  
0
0
10  
10  
35  
30  
30  
0
25  
0
15  
0
0
15  
15  
55  
40  
40  
0
30  
0
20  
0
0
25  
30  
100  
90  
90  
0
55  
0
40  
0
0
40  
40  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Chip Enable to End of Write  
Address Valid to End of Write  
Address Set-up Time  
tWP  
tWR  
tDW  
tHZ  
Write Pulse Width(4)  
Write Recovery Time  
Data Valid to End of Write  
Output High Z Time(1)  
tDH  
tWZ  
tOW  
Data Hold Time  
Write Enabled to Output in High Z(1)  
Output Active From End of Write(1)  
NOTES:  
2692 tbl 09  
1. Transition is measured ±500mV from Low or High-impedance voltage with Output Test Load (Figure 2). This parameter is guaranteed by  
device characterization but is not production tested.  
2. 0°C to +70°C temperature range only, PLCC package only.  
3. For Master/Slave combination, tWC = tBAA + tWP, since R/W = VIL must occur after tBAA.  
4. If OE is low during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off  
data to be placed on the bus for the required tDW. If OE is High during a R/W controlled write cycle, this requirement does not apply and the  
write pulse can be as short as the specified tWP.  
5. “X” in part numbers indicates power rating (SA or LA).  
6. Not available in DIP packages.  
CAPACITANCE(1) (TA = +25°C,f = 1.0MHz)  
Symbol  
Parameter  
Conditions(2) Max. Unit  
CIN  
Input Capacitance  
Output Capacitance  
VIN = 3dV  
VIN = 3dV  
11  
11  
pF  
pF  
COUT  
NOTES:  
2692 tbl 10  
1. This parameter is determined by device characterization but is not  
production tested.  
2. 3dV represents the interpolated capacitance when the input and output  
signals switch from 0V to 3V or from 3V to 0V.  
6.02  
6
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