IDT7027S/L
High-Speed 32K x 16 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating TemperatureandSupply Voltage(5,6)
7027X20
Com'l Only
7027X25
Com'l, Ind
& Military
7027X35
Com'l &
Military
7027X55
Com'l &
Military
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max. Unit
WRITE CYCLE
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
tWC
Write Cycle Time
Chip Enable to End-of-Write(3)
20
15
15
0
25
20
20
0
35
30
30
0
55
45
45
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
EW
t
tAW
tAS
Address Valid to End-of-Write
Address Set-up Time(3)
Write Pulse Width
tWP
15
0
20
0
25
0
40
0
tWR
tDW
tHZ
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time(1,2)
Data Hold Time(4)
15
15
15
30
____
____
____
____
12
15
15
25
____
____
____
____
tDH
0
0
0
0
(1,2)
____
____
____
____
tWZ
tOW
tSWRD
tSPS
Write Enable to Output in High-Z
Output Active from End-of-Write(1, 2,4)
SEM Flag Write to Read Time
SEM Flag Contention Window
12
15
15
25
____
____
____
____
0
5
5
0
5
5
0
5
5
0
5
5
____
____
____
____
____
____
____
____
ns
3199 tbl 13
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM CE= VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time. Refer to Chip Enable
Truth Table.
4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage
and temperature, the actual tDH will always be smaller than the actual tOW.
5. 'X' in part numbers indicates power rating (S or L).
6. Industrial temperature: for other speeds, packages and powers contact your sales office.
9
6.42
IDT [ INTEGRATED DEVICE TECHNOLOGY ]
