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IDT7027S25PF 参数 Datasheet PDF下载

IDT7027S25PF图片预览
型号: IDT7027S25PF
PDF下载: 下载PDF文件 查看货源
内容描述: 高速32K ×16的双端口静态RAM [HIGH-SPEED 32K x 16 DUAL-PORT STATIC RAM]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 19 页 / 161 K
品牌: IDT [ INTEGRATED DEVICE TECHNOLOGY ]
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IDT7027S/L  
High-Speed 32K x 16 Dual-Port Static RAM  
Military, Industrial and Commercial Temperature Ranges  
AC Electrical Characteristics Over the  
Operating TemperatureandSupply Voltage(5,6)  
7027X20  
Com'l Only  
7027X25  
Com'l, Ind  
& Military  
7027X35  
Com'l &  
Military  
7027X55  
Com'l &  
Military  
Symbol  
Parameter  
Min.  
Max.  
Min.  
Max.  
Min.  
Max.  
Min.  
Max. Unit  
WRITE CYCLE  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
tWC  
Write Cycle Time  
Chip Enable to End-of-Write(3)  
20  
15  
15  
0
25  
20  
20  
0
35  
30  
30  
0
55  
45  
45  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
EW  
t
tAW  
tAS  
Address Valid to End-of-Write  
Address Set-up Time(3)  
Write Pulse Width  
tWP  
15  
0
20  
0
25  
0
40  
0
tWR  
tDW  
tHZ  
Write Recovery Time  
Data Valid to End-of-Write  
Output High-Z Time(1,2)  
Data Hold Time(4)  
15  
15  
15  
30  
____  
____  
____  
____  
12  
15  
15  
25  
____  
____  
____  
____  
tDH  
0
0
0
0
(1,2)  
____  
____  
____  
____  
tWZ  
tOW  
tSWRD  
tSPS  
Write Enable to Output in High-Z  
Output Active from End-of-Write(1, 2,4)  
SEM Flag Write to Read Time  
SEM Flag Contention Window  
12  
15  
15  
25  
____  
____  
____  
____  
0
5
5
0
5
5
0
5
5
0
5
5
____  
____  
____  
____  
____  
____  
____  
____  
ns  
3199 tbl 13  
NOTES:  
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2).  
2. This parameter is guaranteed by device characterization, but is not production tested.  
3. To access RAM CE= VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time. Refer to Chip Enable  
Truth Table.  
4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage  
and temperature, the actual tDH will always be smaller than the actual tOW.  
5. 'X' in part numbers indicates power rating (S or L).  
6. Industrial temperature: for other speeds, packages and powers contact your sales office.  
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