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IC42S16100-6TI 参数 Datasheet PDF下载

IC42S16100-6TI图片预览
型号: IC42S16100-6TI
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×16位×2组( 16兆位)同步动态RAM [512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM]
分类和应用:
文件页数/大小: 78 页 / 802 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IC42S16100  
Write Cycle Interruption Using the  
Precharge Command  
A write cycle can be interrupted by the execution of the  
precharge command before that cycle completes. The  
delay time (tWDL) from the precharge command to the point  
where burst input is invalid, i.e., the point where input data  
is no longer written to device internal memory is zero clock  
cycles regardless of the CAS.  
Inversely, to write all the burst data to the device, the  
precharge command must be executed after the write data  
recovery period (tDPL) has elapsed. Therefore, the  
precharge command must be executed on one clock cycle  
that follows the input of the last burst data item.  
To inhibit invalid write, the DQM signal must be asserted  
CAS Latency  
3
0
1
2
0
1
HIGH with the precharge command.  
tWDL  
This precharge command and burst write command must  
be of the same bank, otherwise it is not precharge interrupt  
but only another bank precharge of dual bank operation.  
tDPL  
CLK  
tWDL=0  
PRE 0  
COMMAND  
WRITE A0  
DQM  
I/O  
DIN A0  
DIN A1 DIN A2  
DIN A3  
MASKED BY DQM  
PRECHARGE (BANK 0)  
WRITE (CA=A, BANK 0)  
CAS latency = 2, 3, burst length = 4  
CLK  
tDPL  
PRE 0  
COMMAND  
I/O  
WRITE A0  
DIN A0  
DIN A1  
DIN A2  
DIN A3  
WRITE (CA=A, BANK 0)  
PRECHARGE (BANK 0)  
CAS latency = 2, 3, burst length = 4  
Integrated Circuit Solution Inc.  
31  
DR024-0D 06/25/2004  
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