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IC42S16100-6TI 参数 Datasheet PDF下载

IC42S16100-6TI图片预览
型号: IC42S16100-6TI
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×16位×2组( 16兆位)同步动态RAM [512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM]
分类和应用:
文件页数/大小: 78 页 / 802 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IC42S16100  
Precharge  
Read Cycle Interruption  
Using the Precharge Command  
A read cycle can be interrupted by the execution of the  
precharge command before that cycle completes. The  
delay time (tRQL) from the execution of the precharge  
command to the completion of the burst output is the clock  
cycle of CAS latency.  
The precharge command sets the bank selected by pin  
A11 to the precharged state. This command can be  
executed at a time tRAS following the execution of an active  
command to the same bank. The selected bank goes to the  
idle state at a time tRP following the execution of the  
precharge command, and an active command can be  
executed again for that bank.  
If pin A10 is low when this command is executed, the bank  
selected by pin A11 will be precharged, and if pin A10 is  
HIGH, both banks will be precharged at the same time.  
This input to pin A11 is ignored in the latter case.  
CAS Latency  
3
3
2
2
tRQL  
CLK  
t
RQL  
PRE 0  
COMMAND  
I/O  
READ A0  
DOUT A0  
D
OUT A1  
DOUT A2  
HI-Z  
READ (CA=A, BANK 0)  
PRECHARGE (BANK 0)  
CAS latency = 2, burst length = 4  
CLK  
t
RQL  
PRE 0  
COMMAND  
I/O  
READ A0  
DOUT A0  
D
OUT A1  
D
OUT A2  
HI-Z  
READ (CA=A, BANK 0)  
PRECHARGE (BANK 0)  
CAS latency = 3, burst length = 4  
30  
Integrated Circuit Solution Inc.  
DR024-0D 06/25/2004  
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