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IC42S16100-6TI 参数 Datasheet PDF下载

IC42S16100-6TI图片预览
型号: IC42S16100-6TI
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×16位×2组( 16兆位)同步动态RAM [512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM]
分类和应用:
文件页数/大小: 78 页 / 802 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IC42S16100  
Interval Between Write and Read Commands  
The interval (tCCD) between command must be at least one  
clock cycle.  
The selected bank must be set to the active state before  
executing this command.  
A new read command can be executed while a write cycle  
is in progress, i.e., before that cycle completes. Data  
corresponding to the new read command is output after  
the CAS latency has elapsed from the point the new read  
command was executed. The I/On pins must be placed in  
the HIGH impedance state at least one cycle before data  
is output during this operation.  
CLK  
t
CCD  
COMMAND  
I/O  
WRITE A0 READ B0  
DIN A0  
DOUT B0  
DOUT B1  
D
OUT B2  
DOUT B3  
HI-Z  
WRITE (CA=A, BANK 0) READ (CA=B, BANK 0)  
CAS latency = 2, burst length = 4  
CLK  
t
CCD  
COMMAND  
I/O  
WRITE A0 READ B0  
DIN A0  
DOUT B0  
DOUT B1  
D
OUT B2  
DOUT B3  
HI-Z  
WRITE (CA=A, BANK 0) READ (CA=B, BANK 0)  
CAS latency = 3, burst length = 4  
Don’t Care  
28  
Integrated Circuit Solution Inc.  
DR024-0D 06/25/2004  
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