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IC42S16100-6TI 参数 Datasheet PDF下载

IC42S16100-6TI图片预览
型号: IC42S16100-6TI
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×16位×2组( 16兆位)同步动态RAM [512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM]
分类和应用:
文件页数/大小: 78 页 / 802 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IC42S16100  
Interval Between Read and Write Commands  
A read command can be interrupted and a new write  
command executed while the read cycle is in progress, i.  
e., before that cycle completes. Data corresponding to the  
new write command can be input at the point new write  
command is executed. To prevent collision between input  
and output data at the I/On pins during this operation, the  
output data must be masked using the U/LDQM pins. The  
interval (tCCD) between these commands must be at least  
one clock cycle.  
The selected bank must be set to the active state before  
executing this command.  
CLK  
tCCD  
WRITE B0  
COMMAND  
U/LDQM  
I/O  
READ A0  
HI-Z  
DIN B0  
DIN B1  
DIN B2  
DIN B3  
READ (CA=A, BANK 0) WRITE (CA=B, BANK 0)  
CAS latency = 2, 3, burst length = 4  
Integrated Circuit Solution Inc.  
29  
DR024-0D 06/25/2004  
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