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IC42S16100-6TI 参数 Datasheet PDF下载

IC42S16100-6TI图片预览
型号: IC42S16100-6TI
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×16位×2组( 16兆位)同步动态RAM [512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM]
分类和应用:
文件页数/大小: 78 页 / 802 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IC42S16100  
Burst Data Interruption U/LDQM Pins  
(Write Cycle)  
Burst data input can be temporarily interrupted (muted )  
during a write cycle using the U/LDQM pins. Regardless  
of the CAS latency, as soon as one of the U/LDQM pins  
goes HIGH, the corresponding externally applied input  
data will no longer be written to the device internal circuits.  
Subsequently, the corresponding input continues to be  
muted as long as that U/LDQM pin remains HIGH.  
that pin is dropped to LOW and data will be written to the  
device. This input control operates independently on a  
byte basis with the UDQM pin controlling upper byte input  
(pin I/O8 to I/O15) and the LDQM pin controlling the lower  
byte input (pins I/O0 to I/O7).  
Since the U/LDQM pins control the device input buffers  
only, the cycle continues internally and, inparticular,  
incrementing of the internal burst counter continues.  
The IC42S16100 will revert to accepting input as soon as  
CLK  
COMMAND  
UDQM  
WRITE A0  
tDMD=0  
LDQM  
I/O8-I/O15  
I/O0-I/O7  
DIN A1  
DIN A3  
DIN A3  
DIN A2  
DIN A0  
WRITE (CA=A, BANK 0)  
DATA MASK (LOWER BYTE)  
CAS latency = 2, burst length = 4DATA MASK (UPPER BYTE)  
Don’t Care  
Burst Read and Single Write  
The burst read and single write mode is set up using the  
mode register set command. During this operation, the  
burst read cycle operates normally, but the write cycle only  
writes a single data item for each write cycle. The CAS  
latency and DQM latency are the same as in normal mode.  
CLK  
COMMAND  
WRITE A0  
DIN A0  
I/O  
WRITE (CA=A, BANK 0)  
CAS latency = 2, 3  
34  
Integrated Circuit Solution Inc.  
DR024-0D 06/25/2004  
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