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IBMN325404CT3B-75H 参数 Datasheet PDF下载

IBMN325404CT3B-75H图片预览
型号: IBMN325404CT3B-75H
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 64MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 66 页 / 1699 K
品牌: IBM [ IBM ]
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IBMN325164CT3  
IBMN325804CT3  
IBMN325404CT3  
Preliminary  
256Mb Synchronous DRAM - Die Revision B  
AC Characteristics (TA = 0 to +70°C, VDD = 3.3V ± 0.3V)  
1. An initial pause of 200µs, with DQM and CKE held high, is required after power-up. A Precharge All  
Banks command must be given followed by a minimum of two Auto (CBR) Refresh cycles before or after  
the Mode Register Set operation.  
2. The Transition time is measured between V and V (or between V and V )  
IH  
IL  
IL  
IH  
3. In addition to meeting the transition rate specification, the clock and CKE must transit between V and  
IH  
V (or between V and V ) in a monotonic manner.  
IL  
IL  
IH  
4. Load Circuit A: AC timing tests have V = 0.4 V and V = 2.4 V with the timing referenced to the 1.40V  
IL  
IH  
crossover point  
5. Load Circuit A: AC measurements assume t = 1.0ns.  
T
6. Load Circuit B: AC timing tests have V = 0.8 V and V = 2.0 V with the timing referenced to the 1.40V  
IL  
IH  
crossover point  
7. Load Circuit B: AC measurements assume t = 1.2ns.  
T
.
AC Characteristics Diagrams  
tT  
Vtt = 1.4V  
VIH  
50  
Output  
1.4V  
VIL  
tCKL  
tCKH  
Clock  
Input  
Zo = 50Ω  
50pF  
tSETUP  
AC Output Load Circuit (A)  
tHOLD  
1.4V  
Output  
Zo = 50Ω  
tOH  
50pF  
tAC  
tLZ  
AC Output Load Circuit (B)  
1.4V  
Output  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
06K0608.F39375A  
10/00  
Page 37 of 66  
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