IBMN325164CT3
IBMN325804CT3
IBMN325404CT3
Preliminary
256Mb Synchronous DRAM - Die Revision B
DC Electrical Characteristics (TA = 0 to +70°C, VDD = 3.3V ±0.3V)
Symbol
Parameter
Min.
-1
Max.
+1
Units
Notes
1
Input Leakage Current, any input
(0.0V ≤ V ≤ V ), All Other Pins Not Under Test = 0V
I
µA
I(L)
IN
DD
Output Leakage Current
(D is disabled, 0.0V ≤ V
I
-1
2.4
—
+1
—
µA
V
1
O(L)
≤ V )
DDQ
OUT
OUT
Output Level (LVTTL)
V
OH
Output “H” Level Voltage (
= -2.0mA)
= +2.0mA)
IOUT
Output Level (LVTTL)
V
0.4
V
OL
Output “L” Level Voltage (I
OUT
1. Multiply given planar values by 2 for 2-High stacked device.
DC Output Load Circuit
3.3 V
1200Ω
V
(DC) = 2.4V, I = -2mA
OH
OH
Output
V
(DC) = 0.4V, I = 2mA
OL
OL
50pF
870Ω
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Use is further subject to the provisions at the end of this document.
06K0608.F39375A
10/00
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