IBMN325164CT3
IBMN325404CT3
IBMN325804CT3
256Mb Synchronous DRAM - Die Revision B
Preliminary
Absolute Maximum Ratings
Symbol
Parameter
Power Supply Voltage
Rating
Units
V
Notes
V
-0.3 to +4.6
-0.3 to +4.6
1
1
1
1
1
1
1
1
DD
V
Power Supply Voltage for Output
Input Voltage
V
DDQ
V
-0.3 to V +0.3
V
IN
DD
V
Output Voltage
-0.3 to V +0.3
V
OUT
DD
T
Operating Temperature (ambient)
Storage Temperature
Power Dissipation
0 to +70
-55 to +125
1.0
°C
°C
W
A
T
STG
P
D
I
Short Circuit Output Current
50
mA
OUT
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
Recommended DC Operating Conditions (TA = 0°C to 70°C)
Rating
Symbol
Parameter
Units
Notes
Min.
3.0
Typ.
3.3
3.3
—
Max.
3.6
V
Supply Voltage
V
V
V
V
1
DD
V
Supply Voltage for Output
Input High Voltage
3.0
3.6
1
DDQ
V
2.0
V
+ 0.3
DD
1, 2
1, 3
IH
V
Input Low Voltage
-0.3
—
0.8
IL
1. All voltages referenced to V and V
.
SSQ
SS
2. V (max) = V + 1.2V for pulse width ≤ 5ns.
IH
DD
3. V (min) = V - 1.2V for pulse width ≤ 5ns.
IL
SS
Capacitance (TA = 25°C, f = 1MHz, VDD = 3.3V ± 0.3V)
Symbol
Parameter
Min.
Typ
3.0
2.8
4.5
Max.
Units
Notes
Input Capacitance (A0-A12, BA0, BA1, CS, RAS, CAS, WE, CKE, DQM)
Input Capacitance (CK)
2.5
2.5
4.0
3.8
3.5
6.5
pF
pF
pF
1
1
1
C
I
C
Output Capacitance (DQ0 - DQ15)
O
1. Multiply given planar values by 2 for 2-High stacked device except CS and CKE.
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
06K0608.F39375A
10/00
Page 34 of 66
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