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IBMN312404CT3B-75H 参数 Datasheet PDF下载

IBMN312404CT3B-75H图片预览
型号: IBMN312404CT3B-75H
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 32MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 66 页 / 2855 K
品牌: IBM [ IBM ]
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IBMN312164CT3  
IBMN312404CT3  
IBMN312804CT3  
128Mb Synchronous DRAM - Die Revision B  
Preliminary  
If A10 is high when a Write Command is issued, the Write with Auto-Precharge function is initiated. The bank  
undergoing auto-precharge cannot be reactivated until t  
, Data-in to Active delay, is satisfied.  
DAL  
Burst Write with Auto-Precharge  
(Burst Length = 2, CAS Latency = 2, 3)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CK  
WRITE A  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
COMMAND  
Auto-Precharge  
t
DAL  
CAS latency = 2  
*
tCK2, DQs  
DIN A  
DIN A  
DIN A  
0
1
1
t
DAL  
*
CAS latency = 3  
tCK3, DQs  
DIN A  
0
Bank can be reactivated at completion of tDAL  
tDAL is a function of clock cycle time and speed sort.  
See the Clock Frequency and Latency table.  
.
*
Similar to the Read Command, a Write Command with auto-precharge can not be interrupted by a command  
to the same bank. It can be interrupted by a Read or Write Command to a different bank, however. The inter-  
rupting command will terminate the write. The bank undergoing auto-precharge can not be reactivated until  
t
is satisfied.  
DAL  
Burst Write with Auto-Precharge Interrupted by Write  
(Burst Length = 4, CAS Latency = 3)  
T6 T7 T8  
T0  
T1  
T2  
T3  
T4  
T5  
CK  
WRITE A  
NOP  
NOP  
WRITE B  
NOP  
NOP  
NOP  
NOP  
NOP  
COMMAND  
Auto-Precharge  
t
DAL  
*
CAS latency = 3  
t
CK3, DQs  
DIN A  
DIN A  
DIN B  
DIN B  
DIN B  
DIN B  
3
0
1
0
1
2
Bank can be reactivated at completion of tDAL  
.
*
tDAL is a function of clock cycle time and speed sort.  
See the Clock Frequency and Latency table.  
©IBM Corporation. All rights reserved.  
06K7582.H03335A  
01/01  
Use is further subject to the provisions at the end of this document.  
Page 20 of 66  
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