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IBMN312404CT3B-75H 参数 Datasheet PDF下载

IBMN312404CT3B-75H图片预览
型号: IBMN312404CT3B-75H
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 32MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 66 页 / 2855 K
品牌: IBM [ IBM ]
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IBMN312164CT3  
IBMN312404CT3  
IBMN312804CT3  
128Mb Synchronous DRAM - Die Revision B  
Preliminary  
Burst Read Followed by the Precharge Command  
(Burst Length = 4, CAS Latency = 3)  
T6 T7 T8  
T0  
T1  
T2  
T3  
T4  
T5  
CK  
READ Ax  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
Precharge A  
COMMAND  
0
*
t
RP  
CAS latency = 3  
DOUT Ax  
DOUT Ax  
DOUT Ax  
2
DOUT Ax  
3
0
1
tCK2, DQs  
Bank A can be reactivated at completion of tRP  
tRP is a function of clock cycle and speed sort.  
.
*
Burst Write Followed by the Precharge Command  
(Burst Length = 2, CAS Latency = 2)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CK  
Activate  
Bank Ax  
NOP  
NOP  
Precharge A  
NOP  
NOP  
NOP  
NOP  
WRITE Ax  
COMMAND  
0
t
t
RP  
DPL  
*
CAS latency = 2  
t
CK2, DQs  
DIN Ax  
DIN Ax  
0
1
Bank can be reactivated at completion of tRP  
‡ tDPL and tRP are functions of clock cycle and speed sort.  
See the Clock Frequency and Latency table.  
.
*
©IBM Corporation. All rights reserved.  
06K7582.H03335A  
01/01  
Use is further subject to the provisions at the end of this document.  
Page 22 of 66  
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