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IBMN312404CT3B-75H 参数 Datasheet PDF下载

IBMN312404CT3B-75H图片预览
型号: IBMN312404CT3B-75H
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 32MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 66 页 / 2855 K
品牌: IBM [ IBM ]
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IBMN312164CT3  
IBMN312404CT3  
IBMN312804CT3  
128Mb Synchronous DRAM - Die Revision B  
Preliminary  
Non-Minimum Write to Read Interval  
(Burst Length = 4, CAS latency = 2, 3)  
T5 T6 T7 T8  
T0  
T1  
T2  
T3  
T4  
CK  
NOP  
READ B  
WRITE A  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
COMMAND  
CAS latency = 2  
DIN A  
DIN A  
DIN A  
0
DOUT B  
0
DOUT B  
DOUT B  
DOUT B  
DOUT B  
DOUT B  
DOUT B  
1
1
1
2
3
tCK2, DQs  
CAS latency = 3  
DIN A  
0
DOUT B  
3
0
1
2
tCK3, DQs  
: “H” or “L”  
Input data for the Write is masked.  
Input data must be removed from the DQs at least one clock  
cycle before the Read data appears on the outputs to avoid  
data contention.  
©IBM Corporation. All rights reserved.  
06K7582.H03335A  
01/01  
Use is further subject to the provisions at the end of this document.  
Page 16 of 66  
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