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H5PS1G83EFR 参数 Datasheet PDF下载

H5PS1G83EFR图片预览
型号: H5PS1G83EFR
PDF下载: 下载PDF文件 查看货源
内容描述: 1GB DDR2 SDRAM [1Gb DDR2 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 44 页 / 566 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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H5PS1G43EFR  
H5PS1G83EFR  
H5PS1G63EFR  
General notes, which may apply for all AC parameters  
1. DDR2 SDRAM AC timing reference load  
The following figure represents the timing reference load used in defining the relevant timing parameters  
of the part. It is not intended to be either a precise representation of the typical system environment nor a  
depiction of the actual load presented by a production tester. System designers will use IBIS or other simula-  
tion tools to correlate the timing reference load to a system environment. Manufacturers will correlate to their  
production test conditions (generally a coaxial transmission line terminated at the tester electronics).  
VDDQ  
DQ  
DQS  
DQS  
Output  
DUT  
VTT = VDDQ/2  
RDQS  
RDQS  
Timing  
reference  
point  
25Ω  
AC Timing Reference Load  
The output timing reference voltage level for single ended signals is the crosspoint with VTT. The output tim-  
ing reference voltage level for differential signals is the crosspoint of the true (e.g. DQS) and the complement  
(e.g. DQS) signal.  
2. Slew Rate Measurement Levels  
a. Output slew rate for falling and rising edges is measured between VTT - 250 mV and VTT + 250 mV for  
single ended signals. For differential signals (e.g. DQS - DQS) output slew rate is measured between  
DQS - DQS = -500 mV and DQS - DQS = +500mV. Output slew rate is guaranteed by design, but is  
not necessarily tested on each device.  
b. Input slew rate for single ended signals is measured from dc-level to ac-level: from VREF - 125 mV to  
VREF + 250 mV for rising edges and from VREF + 125 mV and VREF - 250 mV for falling edges.  
For differential signals (e.g. CK - CK) slew rate for rising edges is measured from CK - CK = -250 mV  
to CK - CK = +500 mV (+250mV to -500 mV for falling edges).  
c. VID is the magnitude of the difference between the input voltage on CK and the input voltage on CK, or  
between DQS and DQS for differential strobe.  
3. DDR2 SDRAM output slew rate test load  
Output slew rate is characterized under the test conditions as shown below.  
VDDQ  
DUT  
DQ  
Output  
DQS, DQS  
VTT = VDDQ/2  
RDQS, RDQS  
25Ω  
Test point  
Slew Rate Test Load  
Rev. 0.4 / Nov 2008  
26  
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