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H5PS1G83EFR 参数 Datasheet PDF下载

H5PS1G83EFR图片预览
型号: H5PS1G83EFR
PDF下载: 下载PDF文件 查看货源
内容描述: 1GB DDR2 SDRAM [1Gb DDR2 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 44 页 / 566 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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H5PS1G43EFR  
H5PS1G83EFR  
H5PS1G63EFR  
Note :  
1. VDDQ = 1.8 +/- 0.1V ; VDD = 1.8 +/- 0.1V (exclusively VDDQ = 1.9 +/- 0.1V ; VDD = 1.9 +/- 0.1V for C3 speed  
grade)  
2. IDD specifications are tested after the device is properly initialized  
3. Input slew rate is specified by AC Parametric Test Condition  
4. IDD parameters are specified with ODT disabled.  
5. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met  
with all combinations of EMR bits 10 and 11.  
6. For DDR2-667/800 testing, tCK in the COnditions should be interpreted as tCK (avg).  
7. Definitions for IDD  
LOW is defined as Vin VILAC (max)  
HIGH is defined as Vin VIHAC (min)  
STABLE is defined as inputs stable at a HIGH or LOW level  
FLOATING is defined as inputs at VREF = VDDQ/2  
SWITCHING is defined as: inputs changing between HIGH and LOW every other clock cycle (once per two clocks)  
for address and control signals, and inputs changing between HIGH and LOW every other data transfer (once per  
clock) for DQ signals not including masks or strobes.  
Rev. 0.4 / Nov 2008  
18  
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