欢迎访问ic37.com |
会员登录 免费注册
发布采购

H5PS1G83EFR 参数 Datasheet PDF下载

H5PS1G83EFR图片预览
型号: H5PS1G83EFR
PDF下载: 下载PDF文件 查看货源
内容描述: 1GB DDR2 SDRAM [1Gb DDR2 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 44 页 / 566 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
 浏览型号H5PS1G83EFR的Datasheet PDF文件第10页浏览型号H5PS1G83EFR的Datasheet PDF文件第11页浏览型号H5PS1G83EFR的Datasheet PDF文件第12页浏览型号H5PS1G83EFR的Datasheet PDF文件第13页浏览型号H5PS1G83EFR的Datasheet PDF文件第15页浏览型号H5PS1G83EFR的Datasheet PDF文件第16页浏览型号H5PS1G83EFR的Datasheet PDF文件第17页浏览型号H5PS1G83EFR的Datasheet PDF文件第18页  
H5PS1G43EFR  
H5PS1G83EFR  
H5PS1G63EFR  
3.3 Output Buffer Characteristics  
3.3.1 Output AC Test Conditions  
Symbol  
Parameter  
SSTL_18 Class II  
Units  
Notes  
VOTR  
Output Timing Measurement Reference Level  
0.5 * VDDQ  
V
1
Note:  
1. The VDDQ of the device under test is referenced.  
3.3.2 Output DC Current Drive  
Symbol  
IOH(dc)  
IOL(dc)  
Parameter  
Output Minimum Source DC Current  
Output Minimum Sink DC Current  
SSTl_18  
- 13.4  
Units  
mA  
Notes  
1, 3, 4  
2, 3, 4  
13.4  
mA  
Note:  
1. VDDQ = 1.7 V; VOUT = 1420 mV. (VOUT - VDDQ)/IOH must be less than 21 ohm for values of VOUT between VDDQ  
and VDDQ - 280 mV.  
2. VDDQ = 1.7 V; VOUT = 280 mV. VOUT/IOL must be less than 21 ohm for values of VOUT between 0 V and 280 mV.  
3. The dc value of VREF applied to the receiving device is set to VTT  
4. The values of IOH(dc) and IOL(dc) are based on the conditions given in Notes 1 and 2. They are used to test  
device drive current capability to ensure VIH min plus a noise margin and VIL max minus a noise margin are  
delivered to an SSTL_18 receiver. The actual current values are derived by shifting the desired driver operating  
point (see Section 3.3) along a 21 ohm load line to define a convenient driver current for measurement.  
Rev. 0.4 / Nov 2008  
14  
 复制成功!