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HX6228ABHT 参数 Datasheet PDF下载

HX6228ABHT图片预览
型号: HX6228ABHT
PDF下载: 下载PDF文件 查看货源
内容描述: 128K x 8静态RAM - SOI HX6228 [128K x 8 STATIC RAM-SOI HX6228]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 12 页 / 153 K
品牌: HONEYWELL [ Honeywell ]
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HX6228  
READ CYCLE AC TIMING CHARACTERISTICS (1)  
Worst Case (3)  
Symbol  
Parameter  
Typical  
(2)  
-55 to 125°C  
Units  
Min  
Max  
TAVAVR Address Read Cycle Time  
16  
15  
12  
16  
12  
5
25  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
TAVQV  
TAXQX  
TSLQV  
TSLQX  
TSHQZ  
TEHQV  
TEHQX  
TELQZ  
TGLQV  
TGLQX  
TGHQZ  
Address Access Time  
25  
25  
Address Change to Output Invalid Time  
Chip Select Access Time  
3
5
Chip Select Output Enable Time  
Chip Select Output Disable Time  
Chip Enable Access Time  
10  
25  
16  
12  
6
Chip Enable Output Enable Time  
Chip Enable Output Disable Time  
Output Enable Access Time  
5
2
10  
9
4
Output Enable Output Enable Time  
Output Enable Output Disable Time  
4
4
9
(1) Test conditions: input switching levels VIL/VIH=0.5V/VDD-0.5V (CMOS), VIL/VIH=0V/3V (TTL), input rise and fall times <1 ns/V, input and  
output timing reference levels shown in the Tester AC Timing Characteristics table, capacitive output loading CL >50 pF, or equivalent  
capacitive output loading CL=5 pF for TSHQZ, TELQZ TGHQZ. For CL >50 pF, derate access times by 0.02 ns/pF (typical).  
(2) Typical operating conditions: VDD=5.0 V, TA=25°C, pre-radiation.  
(3) Worst case operating conditions: VDD=4.5 V to 5.5 V, -55°C to 125°C, post total dose at 25°C.  
TAVAVR  
ADDRESS  
TAVQV  
TSLQV  
TAXQX  
NCS  
TSLQX  
TSHQZ  
HIGH  
IMPEDANCE  
DATA OUT  
DATA VALID  
TEHQX  
TEHQV  
TELQZ  
CE  
TGLQX  
TGLQV  
TGHQZ  
NOE  
(NWE = high)  
6
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