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HX6228ABHT 参数 Datasheet PDF下载

HX6228ABHT图片预览
型号: HX6228ABHT
PDF下载: 下载PDF文件 查看货源
内容描述: 128K x 8静态RAM - SOI HX6228 [128K x 8 STATIC RAM-SOI HX6228]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 12 页 / 153 K
品牌: HONEYWELL [ Honeywell ]
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HX6228  
ABSOLUTE MAXIMUM RATINGS (1)  
Rating  
Symbol  
Parameter  
Units  
Min  
-0.5  
-0.5  
-65  
Max  
6.5  
VDD  
Supply Voltage Range (2)  
V
V
VPIN  
Voltage on Any Pin (2)  
VDD+0.5  
150  
TSTORE  
TSOLDER  
PD  
Storage Temperature (Zero Bias)  
Soldering Temperature (5 Seconds)  
Maximum Power Power Dissipation (3)  
DC or Average Output Current  
ESD Input Protection Voltage (4)  
Thermal Resistance (Jct-to-Case)  
Junction Temperature  
°C  
°C  
W
270  
2.5  
IOUT  
25  
mA  
V
VPROT  
ΘJC  
1500  
2
°C/W  
°C  
TJ  
175  
(1) Stresses in excess of those listed above may result in permanent damage. These are stress ratings only, and operation at these levels is not  
implied. Frequent or extended exposure to absolute maximum conditions may affect device reliability.  
(2) Voltage referenced to VSS.  
(3) RAM power dissipation (IDDSB + IDDOP) plus RAM output driver power dissipation due to external loading must not exceed this specification.  
(4) Class 1 electrostatic discharge (ESD) input protection. Tested per MIL-STD-883, Method 3015 by DESC certified lab.  
RECOMMENDED OPERATING CONDITIONS  
Description  
Parameter  
Symbol  
Units  
Min  
4.5  
Typ  
5.0  
25  
Max  
5.5  
VDD  
TA  
Supply Voltage (referenced to VSS)  
Ambient Temperature  
V
°C  
V
-55  
-0.3  
125  
VPIN  
Voltage on Any Pin (referenced to VSS)  
VDD+0.3  
CAPACITANCE (1)  
Worst Case  
Symbol  
Parameter  
Test Conditions  
Typical  
Units  
Max  
Min  
CI  
Input Capacitance  
Output Capacitance  
6
8
7
9
pF  
pF  
VI=VDD or VSS, f=1 MHz  
VIO=VDD or VSS, f=1 MHz  
CO  
(1) This parameter is tested during initial design characterization only.  
DATA RETENTION CHARACTERISTICS  
Worst Case (2)  
Typical  
(1)  
Symbol  
Parameter  
Test Conditions  
Units  
Max  
Min  
NCS=VDR  
VDR  
IDR  
Data Retention Voltage (3)  
Data Retention Current  
2.5  
V
VI=VDR or VSS  
NCS=VDD=VDR  
VI=VDR or VSS  
200  
1.0  
mA  
(1) Typical operating conditions: TA= 25°C, pre-radiation.  
(2) Worst case operating conditions: TA= -55°C to +125°C, past total dose at 25°C.  
(3) To maintain valid data storage during transient radiation, VDD must be held within the recommended operating range.  
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