HX6228
DC ELECTRICAL CHARACTERISTICS
Worst Case (2)
Typical
Symbol
Parameter
Units
Test Conditions
(1)
Min
Max
VIH=VDD, IO=0,
VIL=VSS, f=0MHz
NCS=VDD, IO=0,
f=40 MHz,
IDDSB
Static Supply Current
0.4
0.4
4.5
2.8
2.0
mA
mA
mA
mA
µA
IDDSBMF Standby Supply Current - Deselected
IDDOPW Dynamic Supply Current, Selected (Write)
IDDOPR Dynamic Supply Current, Selected (Read)
2.0
6.0
4.5
+5
f=1 MHz, IO=0, CE=VIH=VDD
NCS=VIL=VSS (3)
f=1 MHz, IO=0, CE=VIH=VDD
NCS=VIL=VSS (3)
VSS≤VI≤VDD
II
Input Leakage Current
Output Leakage Current
Low-Level Input Voltage
-5
VSS≤VIO≤VDD
IOZ
VIL
-10
+10
µA
Output=high Z
CMOS
TTL
1.7
3.2
0.3xVDD
V
V
March Pattern
VDD = 4.5V
0.8
CMOS
TTL
0.7xVDD
V
V
March Pattern
VDD = 5.5V
VIH
High-Level Input Voltage
2.2
0.3
0.005
0.4
0.1
V
V
VDD = 4.5V, IOL = 10 mA
VOL
VOH
Low-Level Output Voltage
High-Level Output Voltage
VDD = 4.5V, IOL = 200 µA
4.3
4.5 VDD-0.1
4.2
V
V
VDD = 4.5V, IOH = -5 mA
VDD = 4.5V, IOH = -200 µA
(1) Typical operating conditions: VDD= 5.0 V,TA=25°C, pre-radiation.
(2) Worst case operating conditions: VDD=4.5 V to 5.5 V, -55°C to +125°C, post total dose at 25°C.
(3) All inputs switching. DC average current.
2.9 V
Valid high
output
+
-
Vref1
Vref2
249
+
-
Valid low
output
DUT
output
C >50 pF*
L
*C = 5 pF for TWLQZ, TSHQZ, TELQZ, and TGHQZ
L
Tester Equivalent Load Circuit
5