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HX6228ABHT 参数 Datasheet PDF下载

HX6228ABHT图片预览
型号: HX6228ABHT
PDF下载: 下载PDF文件 查看货源
内容描述: 128K x 8静态RAM - SOI HX6228 [128K x 8 STATIC RAM-SOI HX6228]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 12 页 / 153 K
品牌: HONEYWELL [ Honeywell ]
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HX6228  
TESTER AC TIMING CHARACTERISTICS  
TTL I/O Configuration  
CMOS I/O Configuration  
3 V  
VDD-0.5 V  
1.5 V  
VDD/2  
Input  
Levels*  
0 V  
0.5 V  
1.5 V  
VDD/2  
Output  
Sense  
Levels  
VDD-0.4V  
0.4 V  
VDD-0.4V  
High Z  
High Z  
0.4 V  
3.4 V  
2.4 V  
3.4 V  
2.4 V  
High Z  
High Z  
High Z = 2.9V  
High Z = 2.9V  
* Input rise and fall times <1 ns/V  
QUALITY AND RADIATIONHARDNESS  
ASSURANCE  
Honeywellmaintainsahighlevelofproductintegritythrough  
process control, utilizing statistical process control, a com-  
plete “Total Quality Assurance System,” a computer data  
base process performance tracking system, and a radia-  
tion hardness assurance strategy.  
procurement by eliminating the need to create detailed  
specifications and offer benefits of improved quality and  
cost savings through standardization.  
RELIABILITY  
The radiation hardness assurance strategy starts with a  
technology that is resistant to the effects of radiation.  
Radiation hardness is assured on every wafer by irradiat-  
ing test structures as well as SRAM product, and then  
monitoring key parameters which are sensitive to ionizing  
radiation. Conventional MIL-STD-883 TM 5005 Group E  
testing, which includes total dose exposure with Cobalt 60,  
may also be performed as required. This Total Quality  
approach ensures our customers of a reliable product by  
engineering in reliability, starting with process develop-  
ment and continuing through product qualification and  
screening.  
Honeywell understands the stringent reliability require-  
ments that space and defense systems require and has  
extensive experience in reliability testing on programs of  
this nature. This experience is derived from comprehen-  
sive testing of VLSI processes. Reliability attributes of the  
RICMOS™ process were characterized by testing spe-  
cially designed irradiated and non-irradiated test struc-  
tures from which specific failure mechanisms were evalu-  
ated. These specific mechanisms included, but were not  
limited to, hot carriers, electromigration and time depend-  
ent dielectric breakdown. This data was then used to make  
changes to the design models and process to ensure more  
reliable products.  
SCREENING LEVELS  
In addition, the reliability of the RICMOS™ process and  
product in a military environment was monitored by testing  
irradiated and non-irradiated circuits in accelerated dy-  
namic life test conditions. Packages are qualified for prod-  
uct use after undergoing Groups B & D testing as outlined  
in MIL-STD-883, TM 5005, Class S. The product is quali-  
fied by following a screening and testing flow to meet the  
customer’s requirements. Quality conformance testing is  
performed as an option on all production lots to ensure the  
ongoing reliability of the product.  
Honeywell offers several levels of device screening to  
meet your system needs. “Engineering Devices” are avail-  
able with limited performance and screening for bread-  
boarding and/or evaluation testing. Hi-Rel Level B and S  
devices undergo additional screening per the require-  
ments of MIL-STD-883. As a QML supplier, Honeywell  
also offers QML Class Q and V devices per MIL-PRF-  
38535 and are available per the applicable Standard  
Microcircuits Drawing (SMD). QML devices offer ease of  
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