DDR and DDR2 SDRAM
Table 15 provides the DDR capacitance when GVDD(typ) = 2.5 V.
Table 15. DDR SDRAM Capacitance for GV (typ) = 2.5 V
DD
Parameter/Condition
Symbol
Min
Max
Unit
Notes
Input/output capacitance: DQ, DQS
Delta input/output capacitance: DQ, DQS
Note:
CIO
6
8
pF
pF
1
1
CDIO
—
0.5
1. This parameter is sampled. GVDD = 2.5 V 0.125 V, f = 1 MHz, TA = 25°C, VOUT = GVDD/2, VOUT (peak-to-peak) = 0.2 V.
Table 16 provides the current draw characteristics for MV
.
REF
Table 16. Current Draw Characteristics for MV
REF
Parameter/Condition
Symbol
Min
Max
Unit
Note
Current draw for MVREF
Note:
1. The voltage regulator for MVREF must supply up to 500 μA current.
IMVREF
—
500
μA
1
6.2
DDR and DDR2 SDRAM AC Electrical Characteristics
This section provides the AC electrical characteristics for the DDR and DDR2 SDRAM interface.
6.2.1
DDR and DDR2 SDRAM Input AC Timing Specifications
Table 17 provides the input AC timing specifications for the DDR2 SDRAM when GV (typ) = 1.8 V.
DD
Table 17. DDR2 SDRAM Input AC Timing Specifications for 1.8-V Interface
At recommended operating conditions with GVDD of 1.8 5%.
Parameter
Symbol
Min
Max
Unit
Notes
AC input low voltage
AC input high voltage
VIL
—
MVREF – 0.25
—
V
V
—
—
VIH
MVREF + 0.25
Table 18 provides the input AC timing specifications for the DDR SDRAM when GV (typ) = 2.5 V.
DD
Table 18. DDR SDRAM Input AC Timing Specifications for 2.5-V Interface
At recommended operating conditions with GVDD of 2.5 5%.
Parameter
Symbol
Min
Max
Unit
Notes
AC input low voltage
AC input high voltage
VIL
—
MVREF – 0.31
—
V
V
—
—
VIH
MVREF + 0.31
MPC8347EA PowerQUICC II Pro Integrated Host Processor Hardware Specifications, Rev. 12
Freescale Semiconductor
18