Freescale Semiconductor, Inc.
ROWE
LDAB
STAB
STAB
LDAB
STAB
JSR
#$0E
$103B
0,X
ROW=1, ERASE=1, EELAT=1, EEPGM=0
Set to ROW erase mode
Store any data to any address in ROW
ROW=1, ERASE=1, EELAT=1, EEPGM=1
Turn on high voltage
#$0F
$103B
DLY10
$103B
Delay 10 ms
CLR
Turn off high voltage and set to READ mode
4.4.1.4 EEPROM Byte Erase
The following is an example of how to erase a single byte of EEPROM and assumes
that index register X contains the address of the byte to be erased.
BYTEE
LDAB
STAB
STAB
LDAB
STAB
JSR
#$16
BYTE=1, ROW=0, ERASE=1, EELAT=1, EEPGM=0
Set to BYTE erase mode
$103B
0,X
Store any data to address to be erased
BYTE=1, ROW=0, ERASE=1, EELAT=1, EEPGM=1
Turn on high voltage
#$17
$103B
DLY10
$103B
Delay 10 ms
CLR
Turn off high voltage and set to READ mode
4.4.2 PPROG EEPROM Programming Control Register
Bits in PPROG register control parameters associated with EEPROM programming.
PPROG — EEPROM Programming Control
$103B
Bit 7
ODD
0
6
EVEN
0
5
—
0
4
BYTE
0
3
ROW
0
2
ERASE
0
1
EELAT
0
Bit 0
EEPGM
0
RESET:
ODD — Program Odd Rows in Half of EEPROM (TEST)
EVEN — Program Even Rows in Half of EEPROM (TEST)
Bit 5 — Not implemented
Always reads zero
BYTE — Byte/Other EEPROM Erase Mode
0 = Row or bulk erase mode used
1 = Erase only one byte of EEPROM
ROW — Row/All EEPROM Erase Mode (only valid when BYTE = 0)
0 = All 512 bytes of EEPROM erased
1 = Erase only one 16-byte row of EEPROM
OPERATING MODES AND ON-CHIP MEMORY
MC68HC11F1
4-16
TECHNICAL DATA
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