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MCHC11F1CFNE2 参数 Datasheet PDF下载

MCHC11F1CFNE2图片预览
型号: MCHC11F1CFNE2
PDF下载: 下载PDF文件 查看货源
内容描述: 技术参数 [Technical Data]
分类和应用: 外围集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 158 页 / 993 K
品牌: FREESCALE [ Freescale ]
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Freescale Semiconductor, Inc.  
Recall that zeros must be erased by a separate erase operation before programming.  
The following example of how to program an EEPROM byte assumes that the appro-  
priate bits in BPROT have been cleared and the data to be programmed is present in  
accumulator A.  
PROG  
LDAB  
STAB  
STAA  
LDAB  
STAB  
JSR  
#$02  
EELAT=1, EEPGM=0  
$103B  
$FE00  
#$03  
Set EELAT bit  
Store data to EEPROM address  
EELAT=1, EEPGM=1  
$103B  
DLY10  
$103B  
Turn on programming voltage  
Delay 10 ms  
CLR  
Turn off high voltage and set to READ mode  
4.4.1.2 EEPROM Bulk Erase  
To erase the EEPROM, ensure that the proper bits of the BPROT register are cleared,  
then complete the following steps using the PPROG register:  
1. Write to PPROG with the ERASE, EELAT, and appropriate BYTE and ROW  
bits set.  
2. Write to the appropriate EEPROM address with any data. Row erase only re-  
quires a write to any location in the row. Bulk erase is accomplished by writing  
to any location in the array.  
3. Write to PPROG with ERASE, EELAT, EEPGM, and the appropriate BYTE and  
ROW bits set.  
4. Delay for 10 ms or more, as appropriate.  
5. Clear the EEPGM bit in PPROG to turn off the high voltage.  
6. Return to step 1 for next byte or row or proceed to step 7.  
7. Clear the PPROG register to reconfigure the EEPROM address and data buses  
for normal operation.  
The following is an example of how to bulk erase the 512-byte EEPROM. The CONFIG  
register is not affected in this example. When bulk erasing the CONFIG register, CON-  
FIG and the 512-byte array are all erased.  
BULKE  
LDAB  
STAB  
STAB  
LDAB  
STAB  
JSR  
#$06  
$103B  
$FE00  
#$07  
ERASE=1, EELAT=1, EEPGM=0  
Set EELAT bit  
Store any data to any EEPROM address  
EELAT=1, EEPGM=1  
$103B  
DLY10  
$103B  
Turn on programming voltage  
Delay 10 ms  
CLR  
Turn off high voltage and set to READ mode  
4.4.1.3 EEPROM Row Erase  
The following example shows how to perform a fast erase of large sections of EE-  
PROM and assumes that index register X contains the address of a location in the de-  
sired row.  
OPERATING MODES AND ON-CHIP MEMORY  
TECHNICAL DATA  
4-15  
For More Information On This Product,  
Go to: www.freescale.com  
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